參數(shù)資料
型號: AM29F800T
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述: 8兆位(1,048,576 x 8-Bit/524,288 x 16位),5.0伏的CMOS只,扇區(qū)擦除閃存
文件頁數(shù): 16/41頁
文件大小: 267K
代理商: AM29F800T
16
Am29F800T/Am29F800B
8/18/97
P R E L I M I N A R Y
Write Operation Status
Table 8.
Hardware Sequence Flags
Notes:
1. DQ2 can be toggled when sector address applied is that of an erasing sector. Conversely, DQ2 cannot be toggled when the
sector address applied is that of a non-erasing sector. DQ2 is therefore used to determine which sectors are erasing and
which are not.
2. These status flags apply when outputs are read from the address of a non-erase-suspended sector.
3. If DQ5 is high (exceeded timing limits), successive reads from a problem sector will cause DQ2 to toggle.
DQ7: Data
Polling
The Am29F800 device features Data Polling as a
method to indicate to the host that the embedded algo-
rithms are in progress or completed. During the Em-
bedded Program Algorithm, an attempt to read the
device will produce the complement of the data last
written to DQ7. Upon completion of the Embedded Pro-
gram Algorithm, an attempt to read the device will pro-
duce the true data last written to DQ7. During the
Embedded Erase Algorithm, an attempt to read the de-
vice will produce a “0” at the DQ7 output.
Upon completion of the Embedded Erase Algorithm an
attempt to read the device will produce a “1” at the DQ7
output. The flowchart for Data Polling (DQ7) is shown
in Figure 3.
For chip erase, the Data Polling is valid after the rising
edge of the sixth WE pulse in the six write pulse se-
quence. For sector erase, the Data Polling is valid after
the last rising edge of the sector erase WE pulse. Data
Polling must be performed at sector addresses within
any of the sectors being erased and
not
a protected
sector. Otherwise, the status may not be valid.
Just prior to the completion of Embedded Algorithm op-
erations DQ7 may change asynchronously while the
output enable (OE) is asserted low. This means that the
device is driving status information on DQ7 at
one instant of time and then that byte’s valid data at the
next instant of time. Depending on when the
system samples the DQ7 output, it may read the status
or valid data. Even if the device has completed
the Embedded Algorithm operations and DQ7 has a
valid data, the data outputs on DQ0–DQ6 may be still
invalid. The valid data on DQ0–DQ7 will be read on the
successive read attempts.
The Data Polling feature is only active during the Em-
bedded Programming Algorithm, Embedded Erase Al-
gorithm, or sector erase time-out (see Table 7).
See Figure 11 for the Data Polling timing specifications
and diagrams.
DQ6: Toggle Bit
The Am29F800 also features the “Toggle Bit” as a
method to indicate to the host system that the embed-
ded algorithms are in progress or completed.
During an Embedded Program or Erase Algorithm cy-
cle, successive attempts to read (OE toggling) data
from the device at any address will result in DQ6 tog-
gling between one and zero. Once the Embedded Pro-
gram or Erase Algorithm cycle is completed, DQ6 will
stop toggling and valid data will be read on the next
successive attempt. During programming, the Toggle
Bit is valid after the rising edge of the fourth WE pulse
in the four write pulse sequence. For chip erase, the
Toggle Bit is valid after the rising edge of the sixth WE
pulse in the six write pulse sequence. For Sector erase,
the Toggle Bit is valid after the last rising edge of the
sector erase WE pulse. The Toggle Bit is active during
the sector erase time-out.
Either CE or OE toggling will cause DQ6 to toggle. In
addition, an Erase Suspend/Resume command will
Status
DQ7
DQ6
DQ5
DQ3
DQ2
RDY/BSY
In Progress
Byte Programming
DQ7
Toggle
0
0
No Tog
0
Program/Erase in Auto-Erase
0
Toggle
0
1
(Note 1)
0
Erase
suspend
mode
Erase sector address
1
No Tog
0
1
Toggle
1
Non-erase sector
address
Data
Data
Data
Data
Data
1
Program in erase suspend
DQ7
(Note 2)
Toggle
0
1
1
(Note 1)
0
Exceeded
Time
Limits
Byte Programming
DQ7
Toggle
1
0
No Tog
0
Program/Erase in Auto-Erase
0
Toggle
1
1
(Note 3)
0
Program in erase suspend
DQ7
Toggle
1
1
(Note 3)
0
相關PDF資料
PDF描述
AM29F800T-120 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800T-120EC 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800T-120ECB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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AM29F800T-120EEB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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