參數(shù)資料
型號： AM29F800T-70FEB
廠商： Advanced Micro Devices, Inc.
英文描述： 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述： 8兆位（1,048,576 x 8-Bit/524，288 x 16位），5.0伏的CMOS只，扇區(qū)擦除閃存
文件頁數(shù)： 41/41頁
文件大?。?/td> 267K
代理商： AM29F800T-70FEB
8/18/97
Am29F800T/Am29F800B
41
P R E L I M I N A R Y
REVISION SUMMARY FOR Am29F800
Distinctive Characteristics:
High Performance: The fastest speed option available
is now 70 ns.
Enhanced power management for standby mode:
Changed typical standby current to 1
μ
A.
General Description:
Added 70 ns speed option.
Product Selector Guide:
Added -70 column.
Pin Configuration:
Added -70 speed option.
Ordering Information, Standard Products:
The -70 speed option is now listed in the example.
Valid Combinations:Added combinations for the -70
speed option.
Table 7, Command Definitions:
Corrected byte addresses for unlock and command cy-
cles from “2AA” to “AAA”.
In the previous data sheet revision, the addresses for
command definitions were shortened from four hexa-
decimal digits to three. The more accurately represents
the actual address bits required, A10–A0. The remain-
ing upper address bits are don’t cares.
The new address is compatible with the previous four-
digit definition of “AAAA”; the only difference is that the
highest-order hexadecimal digit “A” is now “don’t care”.
In fact, software programs written using the previous
four-digit definitions do not require any changes; they
remain completely compatible with the new three-digit
definitions.
The addresses for the byte-mode read cycles (fourth
cycle) in the autoselect mode are corrected from 01h to
02h for device ID, and from SAX02h to SAX04h for
sector protect verification.
Note 5 is clarified.
Operating Ranges:
V
CC
Supply Voltages:Added -70 speed option to the
list.
DC Characteristics:
CMOS Compatible:Added column for typical I
CC
spec-
ifications. Revised max I
CC
specifications.
AC Characteristics:
Read Only Operations Characteristics:Added the -70
column and test conditions.
Test Conditions, Figure 7:
Changed speed option in first C
L
statement to -70.
AC Characteristics:
Write/Erase/Program Operations, Alternate CE Con-
trolled Writes: Added the -70 column; revised word/
byte programming and sector erase specifications.
Erase and Programming Performance:
Revised specifications.
Trademarks
Copyright 1997 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof, and ExpressFlash are trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料
PDF描述
AM29F800T-70FI 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800T-70FIB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800BB-120ED 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BB-120WBF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BB-120WBK 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
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