參數(shù)資料
型號(hào): AM29F800T-70EIB
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述: 8兆位(1,048,576 x 8-Bit/524,288 x 16位),5.0伏的CMOS只,扇區(qū)擦除閃存
文件頁數(shù): 21/41頁
文件大小: 267K
代理商: AM29F800T-70EIB
8/18/97
Am29F800T/Am29F800B
21
P R E L I M I N A R Y
Figure 3.
Data Polling Algorithm
Start
Fail
No
DQ7=Data
No
Pass
Yes
No
Yes
Note:
1.
DQ7 is rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
DQ7=Data
DQ5=1
Yes
Read Byte
(DQ0–DQ7)
Addr=VA
Read Byte
(DQ0–DQ7)
Addr=VA
VA=Byte address for programming
=any of the sector addresses within the
sector being erased during sector erase
operation
=Valid address equals any non-protected
sector group address during chip erase
20375C-8
相關(guān)PDF資料
PDF描述
AM29F800T-70FC 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800T-70FCB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800T-70FE 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800T-70FEB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800T-70FI 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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