參數(shù)資料
型號： AM29F800T-70EC
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述： 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
封裝： TSOP-48
文件頁數(shù)： 8/41頁
文件大?。?/td> 267K
代理商： AM29F800T-70EC
8
Am29F800T/Am29F800B
8/18/97
P R E L I M I N A R Y
Table 1.
Am29F800 User Bus Operations (BYTE = V
IH
)
Table 2.
Am29F800 User Bus Operations (BYTE = V
IL
)
Legend:
L = logic 0, H = logic 1, X = Don’t Care. See Characteristics for voltage levels.
Notes:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 7.
2. Refer to the section on Sector Protection.
Read Mode
The Am29F800 has two control functions which must
be satisfied in order to obtain data at the outputs. CE is
the power control and should be used for device selec-
tion. OE is the output control and should be used to
gate data to the output pins if a device is selected.
Address access time (t
ACC
) is equal to the delay from
stable addresses to valid output data. The chip enable
access time (t
CE
) is the delay from stable addresses
and stable CE to valid data at the output pins.
The output enable access time is the delay from the
falling edge of OE to valid data at the output
pins (assuming the addresses have been stable for at
least t
ACC
–t
OE
time).
Standby Mode
There are two ways to implement the standby mode on
the Am29F800 device, both using the CE pin.
A CMOS standby mode is achieved with the CE input
held at V
CC
±
0.3V. Under this condition the current is
typically reduced to less than 5
μ
A. A TTL standby
mode is achieved with the CE pin held at V
IH
. Under
this condition the current is typically reduced to 1 mA.
Operation
CE
OE
WE
A0
A1
A6
A9
DQ0–DQ15
RESET
Autoselect, AMD Manuf. Code (Note 1)
L
L
H
L
L
L
V
ID
Code
H
Autoselect Device Code (Note 1)
L
L
H
H
L
L
V
ID
Code
H
Read
L
L
X
A0
A1
A6
A9
D
OUT
H
Standby
H
X
X
X
X
X
X
HIGH Z
H
Output Disable
L
H
H
X
X
X
X
HIGH Z
H
Write
L
H
L
A0
A1
A6
A9
D
IN
H
Verify Sector Protect (Note 2)
L
L
H
L
H
L
V
ID
Code
H
Temporary Sector Unprotect
X
X
X
X
X
X
X
X
V
ID
Hardware Reset
X
X
X
X
X
X
X
HIGH Z
L
Operation
CE
OE
WE
A0
A1
A6
A9
DQ0–DQ7
DQ8–DQ15 RESET
Autoselect, AMD Manuf. Code
(Note 1)
L
L
H
L
L
L
V
ID
Code
HIGH Z
H
Autoselect Device Code (Note 1)
L
L
H
H
L
L
V
ID
Code
HIGH Z
H
Read
L
L
X
A0
A1
A6
A9
D
OUT
HIGH Z
H
Standby
H
X
X
X
X
X
X
HIGH Z
HIGH Z
H
Output Disable
L
H
H
X
X
X
X
HIGH Z
HIGH Z
H
Write
L
H
L
A0
A1
A6
A9
D
IN
HIGH Z
H
Verify
Sector Protect (Note 2)
L
L
H
L
H
L
V
ID
Code
HIGH Z
H
Temporary
Sector Unprotect
X
X
X
X
X
X
X
X
HIGH Z
V
ID
Hardware Reset
X
X
X
X
X
X
X
HIGH Z
HIGH Z
L
相關(guān)PDF資料
PDF描述
AM29F800T-70ECB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800T-70EE 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800T-70EEB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800T-70EI 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800T-70EIB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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