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參數(shù)資料
| 型號(hào)： | AM29F800T-150SC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 512K X 16 FLASH 5V PROM, 150 ns, PDSO44 |
| 封裝： | SOP-44 |
| 文件頁(yè)數(shù)： | 29/41頁(yè) |
| 文件大?。?/td> | 267K |
| 代理商： | AM29F800T-150SC |
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8/18/97
Am29F800T/Am29F800B
29
P R E L I M I N A R Y
SWITCHING WAVEFORMS
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ7 is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
6. These waveforms are for the x16 mode.
Figure 9.
Program Operation Timings
Notes:
1. SA is the sector address for Sector Erase.
2. These waveforms are for the x16 mode.
Figure 10.
AC Waveforms Chip/Sector Erase Operations
D
OUT
PD
t
AH
Data Polling
t
DF
t
OH
t
OE
t
DS
t
CS
t
WPH
t
DH
t
WP
t
GHWL
Addresses
CE
OE
WE
Data
5.0 V
DQ7
555H
PA
A0H
PA
3rd Bus Cycle
20375C-14
t
WC
t
RC
t
AS
t
WHWH1
t
CE
t
AS
t
WP
t
CS
t
DH
555H
2AAH
SA
CE
OE
WE
Data
V
CC
AAH
55H
Addresses
2AAH
t
VCS
t
DS
555H
555H
t
WPH
t
GHWL
t
AH
AAH
55H
80H
10H/30H
20375C-15
555 for chip erase
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F800T-150SCB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800T-150SE | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800T-150SEB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800T-150SI | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800T-150SIB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
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