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參數(shù)資料
| 型號(hào)： | AM29F800BT-90DGC1 |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類(lèi)： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| 中文描述： | 1M X 8 FLASH 5V PROM, 90 ns, UUC44 |
| 文件頁(yè)數(shù)： | 9/9頁(yè) |
| 文件大?。?/td> | 207K |
| 代理商： | AM29F800BT-90DGC1 |
5/4/98
Am29F800B Known Good Die
9
SU PP L E ME NT
REVISION SUMMARY FOR AM29F800B KGD
Revision A+1, A+2
Distinctive Characteristics
Changed typical program/erase time to 30 mA to match
the CMOS DC Characteristics table in the Am29F400B
full data sheet.
The minimum guarante per sector is now 1 million
cycles.
Pad Description
Corrected the following dimensions:
X (mils): pads 15, 18, 36
Y (mils): pads 10–12, 35, 36
X (mm): pads 2–22, 37, 38
Y (mm): pads 10–12, 23–32, 35, 36
Physical Specifications
Changed die thickness specification to ~20 mils.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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| AM29F800BT-90DPE 2 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns Die |
| AM29F800BT90DPE2 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns Die |
| AM29F800BT-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F800BT-90ED | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns 48-Pin TSOP 制造商:Spansion 功能描述:IC SM FLASH 5V 8MB |
| AM29F800BT-90ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
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