參數(shù)資料
型號(hào)： Am29F800BT-55FIB
廠商： Advanced Micro Devices, Inc.
英文描述： 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
中文描述： 8兆位（1 M中的x 8-Bit/512畝x 16位），5.0伏的CMOS只，引導(dǎo)扇區(qū)閃存
文件頁數(shù)： 15/39頁
文件大?。?/td> 518K
代理商： AM29F800BT-55FIB
22
Am29F800B
P R E L I M I NARY
DC CHARACTERISTICS
TTL/NMOS Compatible
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. ICC active while Embedded Erase or Embedded Program is in progress.
3. Not 100% tested.
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC max
±1.0
A
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
35
A
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC max
±1.0
A
ICC1
VCC Active Read Current
CE# = VIL, OE# = VIH, VCC = VCC max,
f = 5 MHz, Byte Mode
19
40
mA
CE# = VIL, OE# = VIH, VCC = VCC max,
f = 5 MHz, Word Mode
19
50
mA
ICC2
VCC Active Write Current
(Notes 2 and 3)
CE# = VIL, OE# = VIH, VCC = VCC max
36
60
mA
ICC3
VCC Standby Current
CE#, OE#, and RESET# = VIH,
VCC = VCC max,
0.4
1
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
2.0
VCC
+ 0.5
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 5.0 V
11.5
12.5
V
VOL
Output Low Voltage
IOL = 5.8 mA, VCC = VCC min
0.45
V
VOH
Output High Voltage
IOH = –2.5 mA, VCC = VCC min
2.4
V
VLKO
Low VCC Lock-Out Voltage
3.2
4.2
V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F800BT-55SF 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F800BT-55SI 制造商:Spansion 功能描述:FLASH PARALLEL 5V 8MBIT 1MX8/512KX16 55NS 44SOIC - Rail/Tube
AM29F800BT70EC 制造商:AMD 功能描述:NEW
AM29F800BT-70EC 制造商:Advanced Micro Devices 功能描述:
AM29F800BT-70ED 制造商:Spansion 功能描述:IC SM FLASH 5V 8MB
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