參數(shù)資料
型號(hào): Am29F800BT-55FEB
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),5.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 27/39頁(yè)
文件大小: 518K
代理商: AM29F800BT-55FEB
Am29F800B
33
P R E L I M I NARY
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
-55
-70
-90
-120
-150
JEDEC
Std.
Description
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
55
70
90
120
150
ns
tAVEL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
50
ns
tDVEH
tDS
Data Setup Time
Min
25
30
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
30
35
45
50
ns
tEHEL
tCPH
CE# Pulse Width High
Min
20
ns
tWHWH1
Programming Operation
Byte
Typ
7
s
Word
Typ
12
tWHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
相關(guān)PDF資料
PDF描述
Am29F800BB-55FEB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
Am29LV010BB-55FEB 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
Am29F800BT-55FIB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
Am29F800BB-55FIB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
Am29LV010BB-55FIB 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
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