參數(shù)資料
型號: AM29F800BB-90WBD
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),5.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
文件頁數(shù): 32/44頁
文件大?。?/td> 702K
代理商: AM29F800BB-90WBD
30
Am29F800B
21504E5
November 2, 2006
DA T A S HE E T
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
Description
Speed Options
JEDEC
Std
-55
-70
-90
-120
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
55
70
90
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
WLAX
t
AH
Address Hold Time
Min
45
45
45
50
ns
t
DVWH
t
DS
Data Setup Time
Min
25
30
45
50
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
30
35
45
50
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
20
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Byte
Typ
7
μs
Word
Typ
12
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
RB
Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Max
30
30
35
50
ns
相關(guān)PDF資料
PDF描述
AM29F800BB-90WBF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BB-90WBK 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-120ED 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-120EE 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-120EF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
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