參數(shù)資料
型號(hào): AM29F800BB-55EF
廠(chǎng)商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),5.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 28/44頁(yè)
文件大?。?/td> 702K
代理商: AM29F800BB-55EF
26
Am29F800B
21504E5
November 2, 2006
DA T A S HE E T
TEST CONDITIONS
Table 7. Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
Ω
C
L
6.2 k
Ω
5.0 V
Device
Under
Test
Figure 8. Test Setup
Note:
Diodes are IN3064 or equivalents.
Test Condition
-55
All
others
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
20
ns
Input Pulse Levels
0.0–3.0
0.45–2.4
V
Input timing measurement
reference levels
1.5
0.8, 2.0
V
Output timing measurement
reference levels
1.5
0.8, 2.0
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
相關(guān)PDF資料
PDF描述
AM29F800BB-55EI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BB-55EK 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BB-55SC 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BB-55SD 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BB-55SE 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
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