參數(shù)資料
型號: Am29F400BB-75DGC
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),5.0伏的CMOS只,引導扇區(qū)快閃記憶體模修訂1
文件頁數(shù): 9/9頁
文件大?。?/td> 139K
代理商: AM29F400BB-75DGC
Am29F400B Known Good Die
9
S U P P L E M E N T
REVISION SUMMARY
Revision B
Formatted to match current template. Updated Distinc-
tive Characteristics and General Description sections
using the current main data sheet. Updated for CS39
process technology.
Revision B+1
Distinctive Characteristics
The minimum guarante per sector is now 1 million
cycles.
Global
Added -75 and -90 speed options.
Pad Description
Corrected coordinates for pads 2, 19, 22, 35, 40, and
42.
Physical Specifications
Changed die thickness specification to ~20 mils.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料
PDF描述
AM29F400BT-75DGC1 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
AM29F400BB-75DGC1 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
Am29F400BT-75DGE 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
Am29F400BB-75DGE 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
AM29F400BT-75DGE1 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
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