參數(shù)資料
型號： AM29F400BB-50SC
英文描述： 60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFIZ24E with Standard Packaging
中文描述： x8/x16閃存EEPROM
文件頁數(shù)： 1/39頁
文件大小： 728K
代理商： AM29F400BB-50SC
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21527
Issue Date:
November 28, 2000
Rev:
D
Amendment/
0
Am29F002B/Am29F002NB
2 Megabit (256 K x 8-Bit)
CMOS 5.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— 5.0 Volt-only operation for read, erase, and
program operations
— Minimizes system level requirements
I
Manufactured on 0.32 μm process technology
— Compatible with 0.5 μm Am29F002 device
I
High performance
— Access times as fast as 55 ns
I
Low power consumption (typical values at
5 MHz)
— 1 μA standby mode current
— 20 mA read current
— 30 mA program/erase current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write cycle guarantee per
sector
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
I
Package option
— 32-pin PDIP
— 32-pin TSOP
— 32-pin PLCC
I
Compatibility with JEDEC standards
— Pinout and software compatible with
single-power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data (not available on Am29F002NB)
相關(guān)PDF資料
PDF描述
AM29F400BB-50SE 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ34VL with Standard Packaging
AM29F400BB-50SI 30V Single N-Channel HEXFET Power MOSFET in a SOT-223 package; A IRLL2703 with Standard Packaging
AM29F400BB-55EC0 x8/x16 Flash EEPROM
AM29F400BB-55EE0 100V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7452 with Standard Packaging
AM29F400BB-55EI0 x8/x16 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F400BB-55ED 制造商:Spansion 功能描述:FLASH BOTTOM BLOCK 4MB SMD 29F400
AM29F400BB-55EF 功能描述:閃存 4M (512KX8/256Kx16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F400BB-55EF\\T 制造商:Spansion 功能描述:IC 4MEG FLSH X 16 CMOS BOTTOM
AM29F400BB-55EF\T 功能描述:閃存 4M (512KX8/256Kx16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F400BB-55SE\T 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 55ns 44-Pin SO T/R
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