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參數(shù)資料
| 型號(hào)： | Am29F400BB-120DWC |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| 中文描述： | 4兆位（512畝x 8-Bit/256畝x 16位），5.0伏的CMOS只，引導(dǎo)扇區(qū)快閃記憶體模修訂1 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | AM29F400BB-120DWC |
SUPPLEMENT
Publication#
21258
Issue Date:
April 1998
Rev:
B
Amendment/
+1
Am29F400B Known Good Die
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— 5.0 volt-only operation for read, erase, and
program operations
— Minimizes system level requirements
I
Manufactured on 0.35 μm process technology
— Compatible with 0.5 μm Am29F400 device
I
High performance
— Acess time as fast as 70 ns
I
Low power consumption (typical values at 5
MHz)
— 1 μA standby mode current
— 20 mA read current (byte mode)
— 28 mA read current (word mode)
— 30 mA program/erase current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write cycle per sector
guaranteed
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power-supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
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PDF描述 |
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| Am29F400AB-150EIB | Dual Retriggerable Monostable Multivibrators 16-SSOP -40 to 85 |
| AM29F400AB-150FC | 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| Am29F400AB-150FCB | Dual Retriggerable Monostable Multivibrators 16-SOIC -40 to 85 |
| AM29F400AB-150FI | 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| Am29F400AB-150FIB | Dual Retriggerable Monostable Multivibrators 16-TVSOP -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F400BB120EC | 制造商:AMD 功能描述:New |
| AM29F400BB-120SC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F400BB120SI | 制造商:AMD 功能描述:* |
| AM29F400BB45EF | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 45ns 48-Pin TSOP |
| AM29F400BB-45EFT | 制造商:Spansion 功能描述: |
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