參數(shù)資料
型號(hào)： Am29F400AB-120ECB
廠商： Advanced Micro Devices, Inc.
英文描述： 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述： 4兆位（524,288 x 8-Bit/262，144 x 16位），5.0伏的CMOS只，扇區(qū)擦除閃存
文件頁(yè)數(shù)： 7/9頁(yè)
文件大小： 139K
代理商： AM29F400AB-120ECB
Am29F400B Known Good Die
7
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
Die dimensions . . . . . . . . . 141.34 mils x 207.48 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . .3.59 mm x 5.27 mm
Die Thickness. . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils
Bond Pad Size . . . . . . . . . . . . . . 3.94 mils x 3.94 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100 μm x 100 μm
Pad Area Free of Passivation . . . . . . . . . .15.52 mils
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000 μm
2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43
Bond Pad Metalization . . . . . . . . . . . . . . . . . . Al/Cu/Si
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
V
CC
(Supply Voltage) . . . . . . . . . . . . . . .4.5 V to 5.5 V
Junction Temperature Under Bias . .T
J
(max) = 130
°
C
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0
°
C to +70
°
C
Industrial . . . . . . . . . . . . . . . . . . . –40
°
C to +85
°
C
Extended . . . . . . . . . . . . . . . . . . –55
°
C to +125
°
C
MANUFACTURING INFORMATION
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . .FASL
Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDC
Manufacturing ID (Top Boot) . . . . . . . . . . . .98965AK
(Bottom Boot) . . . . . . . .98965ABK
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . . .CS39
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SPECIAL HANDLING INSTRUCTIONS
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250
°
C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Storage
Store at a maximum temperature of 30
°
C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
相關(guān)PDF資料
PDF描述
AM29F400AB-120EI 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
Am29F400AB-120EIB 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F400AB-120FC 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
Am29F400AB-120FCB 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F400AB-120FI 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F400AB-120SC 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 4M-Bit 512K x 8/256K x 16 120ns 44-Pin SO
AM29F400AB-70EI 制造商:Advanced Micro Devices 功能描述:
AM29F400AB-75EC 制造商:Advanced Micro Devices 功能描述:
AM29F400AB90SC 制造商:AMD 功能描述:*
AM29F400AT-120SC 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 4M-Bit 512K x 8/256K x 16 120ns 44-Pin SO
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