參數(shù)資料
型號(hào)： AM29F200BB-120DTE1
元件分類(lèi)： EEPROM
英文描述： EEPROM
中文描述： EEPROM的
文件頁(yè)數(shù)： 1/39頁(yè)
文件大?。?/td> 728K
代理商： AM29F200BB-120DTE1
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21527
Issue Date:
November 28, 2000
Rev:
D
Amendment/
0
Am29F002B/Am29F002NB
2 Megabit (256 K x 8-Bit)
CMOS 5.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— 5.0 Volt-only operation for read, erase, and
program operations
— Minimizes system level requirements
I
Manufactured on 0.32 μm process technology
— Compatible with 0.5 μm Am29F002 device
I
High performance
— Access times as fast as 55 ns
I
Low power consumption (typical values at
5 MHz)
— 1 μA standby mode current
— 20 mA read current
— 30 mA program/erase current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write cycle guarantee per
sector
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
I
Package option
— 32-pin PDIP
— 32-pin TSOP
— 32-pin PLCC
I
Compatibility with JEDEC standards
— Pinout and software compatible with
single-power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data (not available on Am29F002NB)
相關(guān)PDF資料
PDF描述
AM29F200BB-120DTI1 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF2907Z with Standard Packaging
AM29F200BB-120DWC1 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRLIZ34N with Standard Packaging
AM29F200BB-120DWE1 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRFB38N20D with Lead Free Packaging
AM29F200BB-120DWI1 EEPROM
AM29F200BB-120EC 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3705N with Standard Packaging
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F200BB-120EC 制造商:Advanced Micro Devices 功能描述:
AM29F200BB-120SI 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC
AM29F200BB-120SI\T 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R
AM29F200BB-45SI 制造商:Advanced Micro Devices 功能描述:
AM29F200BB-55EF 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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