參數(shù)資料
型號： AM29F200B-75EC
英文描述： x8/x16 Flash EEPROM
中文描述： x8/x16閃存EEPROM
文件頁數(shù)： 21/39頁
文件大?。?/td> 728K
代理商： AM29F200B-75EC
Am29F002B/Am29F002NB
21
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . .
–65
°
C to +150
°
C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55
°
C to +125
°
C
Voltage with Respect to Ground
V
CC
(Note 1) . . . . . . . . . . . . . . . .–2.0 V to +7.0 V
A9
,
OE#
,
and
RESET# (Note 2). . . . . . . . . . . .–2.0 V to +12.5 V
All other pins (Note 1) . . . . . . . . .–0.5 V to +7.0 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1.
Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, input or I/O pins may overshoot V
SS
to
–2.0 V for periods of up to 20 ns. See Figure 6. Maximum
DC voltage on input or I/O pins is
V
CC
+0.5 V During
voltage transitions, nput or I/O pins may overshoot to V
CC
+2.0 V for periods up to 20 ns. See Figure 7.
2. Minimum DC nput voltage on pins A9, OE#, and RESET#
is –0.5 V During voltage transitions, A9, OE#, and
RESET# may overshoot V
SS
to –2.0 V for periods of up to
20 ns. See Figure 6. Maximum DC nput voltage on pin A9
is +12.5 V which may overshoot to +13.5 V for periods up
to 20 ns. (RESET# is not available on Am29F002NB)
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T
A
) . . . . . . . . . . .
0°C to +70°C
Industrial (I) Devices
Ambient Temperature (T
A
) . . . . . . . . . –40°C to +85°C
Extended (E) Devices
Ambient Temperature (T
A
) . . . . . . . . –55°C to +125°C
V
CC
Supply Voltages
V
CC
for ± 5% devices. . . . . . . . . . .+4.75 V to +5.25 V
V
CC
for ± 10% devices. . . . . . . . . . . .+4.5 V to +5.5 V
Operating ranges define those limits between which the func-
tionality of the device is guaranteed.
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
Figure 6.
Maximum Negative
Overshoot Waveform
20 ns
20 ns
V
CC
+2.0 V
V
CC
+0.5 V
20 ns
2.0 V
Figure 7.
Overshoot Waveform
Maximum Positive
相關(guān)PDF資料
PDF描述
AM29F200B-75FC 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRLU3714Z with Standard Packaging
AM29F200B-75SC 80V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7493 with Standard Packaging
AM29F200B-90EC x8/x16 Flash EEPROM
AM29F200B-90EE 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR3915 with Standard Packaging
AM29F200B-90EEB 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ34VS with Lead Free Packaging
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F200BB-120EC 制造商:Advanced Micro Devices 功能描述:
AM29F200BB-120SI 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC
AM29F200BB-120SI\T 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R
AM29F200BB-45SI 制造商:Advanced Micro Devices 功能描述:
AM29F200BB-55EF 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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