參數(shù)資料
型號(hào): AM29F200B-150SEB
英文描述: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3103 with Standard Packaging
中文描述: x8/x16閃存EEPROM
文件頁(yè)數(shù): 20/39頁(yè)
文件大?。?/td> 728K
代理商: AM29F200B-150SEB
20
Am29F002B/Am29F002NB
Table 6.
Write Operation Status
Notes:
1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
2.
DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
Operation
DQ7
(Note 1)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
(Note 2)
0
0
DQ3
N/A
1
DQ2
(Note 1)
No toggle
Toggle
Standard
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
Reading within Erase
Suspended Sector
Reading within Non-Erase
Suspended Sector
Erase-Suspend-Program
Erase
Suspend
Mode
1
No toggle
0
N/A
Toggle
Data
Data
Data
Data
Data
DQ7#
Toggle
0
N/A
N/A
相關(guān)PDF資料
PDF描述
AM29F016B-120FI 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to the IRFZ44VL with Lead Free packaging
AM29F016B-120SC 150V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7494 with Standard Packaging
AM29F016B-120SE x8 Flash EEPROM
AM29F016B-120SEB EEPROM
AM29F016B-120SI x8 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F200BB-120EC 制造商:Advanced Micro Devices 功能描述:
AM29F200BB-120SI 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC
AM29F200BB-120SI\T 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R
AM29F200BB-45SI 制造商:Advanced Micro Devices 功能描述:
AM29F200BB-55EF 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel