參數(shù)資料
型號(hào)： AM29F200B-150FC
英文描述： 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1405ZL with Lead Free Packaging
中文描述： x8/x16閃存EEPROM
文件頁數(shù)： 28/39頁
文件大小： 728K
代理商： AM29F200B-150FC
28
Am29F002B/Am29F002NB
AC CHARACTERISTICS
OE#
WE#
CE#
V
CC
Data
Addresses
t
DS
t
AH
t
DH
t
WP
PD
t
WHWH1
t
WC
t
AS
t
WPH
t
VCS
555h
PA
PA
Read Status Data (last two cycles)
A0h
t
CS
Status
D
OUT
Program Command Sequence (last two cycles)
t
CH
PA
Notes:
1. PA = program address, PD = program data, D
OUT
is the true data at the program address.
Figure 11.
Program Operation Timings
相關(guān)PDF資料
PDF描述
AM29F200B-150FE A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in ; A IRF6609 with Standard Tape and Reel Quantity of 4800
AM29F200B-150FEB x8/x16 Flash EEPROM
AM29F200B-150FI 80V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU3418 with Standard Packaging
AM29F200B-150SC A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package. Recommended replacement is IRF6621; A IRF6608 with Standard Tape and Reel Quantity
AM29F200B-150SE 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL540N with Standard Packaging
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F200BB-120EC 制造商:Advanced Micro Devices 功能描述:
AM29F200BB-120SI 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC
AM29F200BB-120SI\T 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R
AM29F200BB-45SI 制造商:Advanced Micro Devices 功能描述:
AM29F200BB-55EF 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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