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參數(shù)資料
| 型號： | AM29F160DT90EC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 1M X 16 FLASH 5V PROM, 90 ns, PDSO48 |
| 封裝： | MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 46/46頁 |
| 文件大?。?/td> | 914K |
| 代理商： | AM29F160DT90EC |
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Am29F160D
45
REVISION SUMMARY
Revision A (January 1999)
Initial release.
Revision B (June 14, 1999)
Global
Expanded data sheet into document with full specifica-
tions.
Deleted the 55 ns speed options.
Distinctive Characteristics
In the Ultra Low Power Consumption bullets, changed
the typical current to match the DC specifications
(CMOS Compatible) table.
Revision B+1 (July 7, 1999)
Connection Diagrams
Corrected the signals on pins 39 and 40 of the reverse
TSOP package.
Revision B+2 (July 14, 1999)
Global
Changed the V
CC
operating range of the 70 ns speed
option to 5.0 V ± 5%. Deleted all references to uniform
sector.
Command Definitions table
In Note 7, added a reference to CFI query mode.
Revision B+3 (July 30, 1999)
Global
Changed the part number designator for the 70 ns
speed option to 75 (with V
CC
rated at 5.0 V ± 5%).
DC Characteristics
TTL/NMOS Compatible table:
Changed the maximum
current specification for I
CC2
to 50 mA.
Revision B+4 (September 10, 1999)
Device Bus Operations
Write Protect (WP#):
Clarified explanatory text.
Command Definitions
Autoselect Command Sequence:
Added text and table
explaining effect of WP# input on autoselect code
output for 16 Kbyte boot sector.
Revision C (November 16, 1999)
AC Characteristics—Figure 14. Program
Operations Timing and Figure 15. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision D (December 4, 2000)
Removed Advance Information status from document.
Ordering Information
Deleted optional processing.
Table 9, Command Definitions
In Note
5, changed the lower address bit in don’t care
range to A11.
Table 11, Test Specifications
Changed capacitive loading on 70 ns speed option to
30 pF
Trademarks
Copyright 2000 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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| AM29F160DT90EI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F160DT90FC | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F160DT90FI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F160DB90EC | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F160DB90EI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F160DT-90EE | 制造商:Spansion 功能描述:16M (2MX8/1MX16) 5V, BOOT BLOCK, TOP, TSOP48, EXT - Trays |
| AM29F160DT-90EF | 功能描述:閃存 16Mb 90ns 5V Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F160DT-90EI | 功能描述:閃存 IC 16MX16, 3V 100K FLSH, BOTTM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F200AB-120DPE1 | 制造商:Spansion 功能描述:5V 2M FLASH KNOWN GOOD DIE W/ BOTTOM BOOT (EXTENDED TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F200AB-90SC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 44 Pin, Plastic, SOP |
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