參數(shù)資料
型號(hào): AM29F160DT75FI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: Triple 3-Input Positive-AND Gates 14-TSSOP -40 to 85
中文描述: 1M X 16 FLASH 5V PROM, 70 ns, PDSO48
封裝: REVERSE, MO-142DD, TSOP-48
文件頁數(shù): 39/46頁
文件大小: 914K
代理商: AM29F160DT75FI
38
Am29F160D
AC CHARACTERISTICS
Enter
Embedded
Erasing
Temporary Sector Unprotect
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
Note:
The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the
erase-suspended sector.
Figure 18.
DQ2 vs. DQ6
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
RESET#
t
VIDR
12 V
0 or 5 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
0 or 5 V
Figure 19.
Temporary Sector Unprotect Timing Diagram
相關(guān)PDF資料
PDF描述
AM29F200AB-120FI 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
Am29F200AB-55SEB 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F200AB-55SI 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
Am29F200AB-55SIB 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F200AB-70EC 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
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