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參數(shù)資料
| 型號： | AM29F160DT120 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | Triple 3-Input Positive-AND Gates 14-SOIC -40 to 85 |
| 中文描述： | 16兆位（2米× 8位/ 1個M x 16位），5.0伏的CMOS只，引導扇區(qū)閃存 |
| 文件頁數(shù)： | 17/46頁 |
| 文件大小： | 914K |
| 代理商： | AM29F160DT120 |
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16
Am29F160D
Table 6.
System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
1Bh
36h
0045h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0055h
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
3Ch
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
Typical timeout per single byte/word write 2
N
μs
1Fh
3Eh
0004h
20h
40h
0000h
Typical timeout for Min. size buffer write 2
N
μs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2
N
ms
22h
44h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2
N
times typical
24h
48h
0000h
Max. timeout for buffer write 2
N
times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2
N
times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Table 7.
Device Geometry Definition
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
27h
4Eh
0015h
Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0004h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0000h
0000h
0040h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
0001h
0000h
0020h
0000h
Erase Block Region 2 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0080h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
001Eh
0000h
0000h
0001h
Erase Block Region 4 Information
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F160DT120EC | Triple 3-Input Positive-AND Gates 14-SOIC -40 to 85 |
| AM29F160DT120EI | Triple 3-Input Positive-AND Gates 14-SO -40 to 85 |
| AM29F160DT120FC | Triple 3-Input Positive-AND Gates 14-SO -40 to 85 |
| AM29F160DT120FI | Triple 3-Input Positive-AND Gates 14-SO -40 to 85 |
| AM29F160DT75 | Triple 3-Input Positive-AND Gates 14-TSSOP -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F160DT-120EI | 制造商:Spansion 功能描述:16M (2MX8/1MX16) 5V, BOOT BLOCK, TOP, TSOP48, IND - Trays |
| AM29F160DT-70EF\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8/1MX16 70NS 48TSOP - Tape and Reel |
| AM29F160DT-70EF\T | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8/1MX16 70NS 48TSOP - Tape and Reel |
| AM29F160DT-70EI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M/1M x 8bit/16bit 70ns 48-Pin TSOP |
| AM29F160DT-75EF | 功能描述:閃存 16Mb 75ns 5V Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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