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參數(shù)資料
| 型號： | AM29F160DB120 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位/ 1個M x 16位），5.0伏的CMOS只，引導扇區(qū)閃存 |
| 文件頁數(shù)： | 23/46頁 |
| 文件大小： | 914K |
| 代理商： | AM29F160DB120 |
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22
Am29F160D
Command Definitions
Table 9.
Am29F160D Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE# pulse, whichever
happens later.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A19–A12 uniquely select any sector.
Notes:
1.
2.
3.
See Table 1 for description of bus operations.
All values are in hexadecimal.
Except when reading array or autoselect data, all bus cycles are
write operations.
Data bits DQ15–DQ8 are don’t cares for unlock and command
cycles.
Address bits A19–A11 are don’t cares for unlock and command
cycles, unless SA or PA required.
No unlock or command cycles required when reading array data.
The Reset command is required to return to reading array data
when device is in the autoselect mode, CFI query mode, or if
DQ5 goes high (while the device is providing status data).
The fourth cycle of the autoselect command sequence is a read
cycle.
4.
5.
6.
7.
8.
9.
The data is 00h for an unprotected sector and 01h for a protected
sector. See “Autoselect Command Sequence” for more
information.
10. Command is valid when device is ready to read array data or
when device is in autoselect mode.
11. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
12. The Unlock Bypass Reset command is required to return to
reading array data when the device is in the unlock bypass mode.
13. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
14. The Erase Resume command is valid only during the Erase
Suspend mode.
Command
Sequence
(Note 1)
C
Bus Cycles (Notes 2–5)
Third
Addr
Data Addr
First
Second
Addr
Fourth
Fifth
Sixth
Addr
RA
XXX
555
AAA
555
AAA
555
AAA
Data
RD
F0
Data
Data
Addr Data
Addr
Data
Read (Note 6)
Reset (Note 7)
1
1
A
Manufacturer ID
Word
Byte
Word
Byte
Word
Byte
4
AA
2AA
555
2AA
555
2AA
555
55
555
AAA
555
AAA
555
AAA
90
X00
01
Device ID,
Top Boot Block
4
AA
55
90
X01
X02
X01
X02
22D2
D2
22D8
D8
XX00
XX01
00
01
Device ID,
Bottom Boot Block
4
AA
55
90
Sector Protect Verify
(Note 9)
Word
4
555
AA
2AA
55
555
90
(SA)
X02
Byte
AAA
555
AAA
(SA)
X04
CFI Query (Note 10)
Word
Byte
Word
Byte
Word
1
555
AAA
555
AAA
555
98
Program
4
AA
2AA
555
2AA
55
555
AAA
555
A0
PA
PD
Unlock Bypass
3
AA
55
20
Byte
AAA
XXX
XXX
555
AAA
555
AAA
XXX
XXX
555
PA
XXX
2AA
555
2AA
555
AAA
Unlock Bypass Program (Note 11)
Unlock Bypass Reset (Note 12)
2
2
A0
90
PD
00
Chip Erase
Word
Byte
Word
Byte
6
AA
55
555
AAA
555
AAA
80
555
AAA
555
AAA
AA
2AA
555
2AA
555
55
555
AAA
10
Sector Erase
6
AA
55
80
AA
55
SA
30
Erase Suspend (Note 13)
Erase Resume (Note 14)
1
1
B0
30
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F160DB-120EC | 制造商:Spansion 功能描述:16M (2MX8/1MX16) 5V, BOOT BLOCK, BOT, TSOP48, COM - Trays |
| AM29F160DB-120EI | 制造商:Spansion 功能描述:16M (2MX8/1MX16) 5V, BOOT BLOCK, BOT, TSOP48, IND - Trays |
| AM29F160DB-70ED | 制造商:Spansion 功能描述: |
| AM29F160DB-70EF | 功能描述:閃存 16Mb 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F160DB-70EFT | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M/1M x 8bit/16bit 70ns 48-Pin TSOP T/R |
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