參數(shù)資料
型號： AM29F160D
廠商： Advanced Micro Devices, Inc.
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
中文描述： 16兆位（2米× 8位/ 1個M x 16位），5.0伏的CMOS只，引導扇區(qū)閃存
文件頁數(shù)： 2/46頁
文件大?。?/td> 914K
代理商： AM29F160D
Publication#
22288
Issue Date:
December 4, 2000
Rev:
D
Amendment/
0
Am29F160D
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
5.0 Volt single power supply operation
— Minimizes system-level power requirements
I
High performance
— Access times as fast as 70 ns
I
Manufactured on 0.25 μm process technology
I
CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
I
Ultra low power consumption (typical values at
5 MHz)
— 15 mA typical active read current
— 35 mA typical erase/program current
— 300 nA typical standby mode current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
thirty-one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
thirty-one 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
— Hardware method of locking a sector to prevent
program or erase operations within that sector
— Sectors can be locked in-system or via
programming equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top boot or bottom boot configurations
available
I
Minimum 1,000,000 write cycle guarantee
per sector
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
I
Package options
— 48-pin TSOP
I
Compatibile with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Unlock Bypass Program command
— Reduces overall programming time when
issuing multiple program command sequences
I
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
I
Hardware reset pin (RESET#)
— Hardware method to reset the device for reading
array data
I
WP# input pin
— At
VIL
, protects the 16 Kbyte boot sector,
regardless of sector protect/unprotect status
— At V
IH
, allows removal of boot sector protection
I
Program and Erase Performance
— Sector erase time: 1 s typical for each 64 Kbyte
sector
— Byte program time: 7 μs typical
相關(guān)PDF資料
PDF描述
AM29F160DB120 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F160DB120EC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F160DB120EI LAMPE
AM29F160DB120FC CABLE
AM29F160DB120FI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F160DB-120EC 制造商:Spansion 功能描述:16M (2MX8/1MX16) 5V, BOOT BLOCK, BOT, TSOP48, COM - Trays
AM29F160DB-120EI 制造商:Spansion 功能描述:16M (2MX8/1MX16) 5V, BOOT BLOCK, BOT, TSOP48, IND - Trays
AM29F160DB-70ED 制造商:Spansion 功能描述:
AM29F160DB-70EF 功能描述:閃存 16Mb 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F160DB-70EFT 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M/1M x 8bit/16bit 70ns 48-Pin TSOP T/R
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