參數(shù)資料
型號: AM29F100AT-90FE
英文描述: 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFZ24NL with Lead Free Packaging
中文描述: x8/x16閃存EEPROM
文件頁數(shù): 21/39頁
文件大?。?/td> 728K
代理商: AM29F100AT-90FE
Am29F002B/Am29F002NB
21
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . .
–65
°
C to +150
°
C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55
°
C to +125
°
C
Voltage with Respect to Ground
V
CC
(Note 1) . . . . . . . . . . . . . . . .–2.0 V to +7.0 V
A9
,
OE#
,
and
RESET# (Note 2). . . . . . . . . . . .–2.0 V to +12.5 V
All other pins (Note 1) . . . . . . . . .–0.5 V to +7.0 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1.
Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, input or I/O pins may overshoot V
SS
to
–2.0 V for periods of up to 20 ns. See Figure 6. Maximum
DC voltage on input or I/O pins is
V
CC
+0.5 V During
voltage transitions, nput or I/O pins may overshoot to V
CC
+2.0 V for periods up to 20 ns. See Figure 7.
2. Minimum DC nput voltage on pins A9, OE#, and RESET#
is –0.5 V During voltage transitions, A9, OE#, and
RESET# may overshoot V
SS
to –2.0 V for periods of up to
20 ns. See Figure 6. Maximum DC nput voltage on pin A9
is +12.5 V which may overshoot to +13.5 V for periods up
to 20 ns. (RESET# is not available on Am29F002NB)
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T
A
) . . . . . . . . . . .
0°C to +70°C
Industrial (I) Devices
Ambient Temperature (T
A
) . . . . . . . . . –40°C to +85°C
Extended (E) Devices
Ambient Temperature (T
A
) . . . . . . . . –55°C to +125°C
V
CC
Supply Voltages
V
CC
for ± 5% devices. . . . . . . . . . .+4.75 V to +5.25 V
V
CC
for ± 10% devices. . . . . . . . . . . .+4.5 V to +5.5 V
Operating ranges define those limits between which the func-
tionality of the device is guaranteed.
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
Figure 6.
Maximum Negative
Overshoot Waveform
20 ns
20 ns
V
CC
+2.0 V
V
CC
+0.5 V
20 ns
2.0 V
Figure 7.
Overshoot Waveform
Maximum Positive
相關(guān)PDF資料
PDF描述
AM29F100AT-90FI A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in ; Similar to IRF6618 qualified for use with lead free soldering shipped in tape and reel 1000 pieces
AM29F100AT-90SC x8/x16 Flash EEPROM
AM29F200B-120EC 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ44N with Standard Packaging
AM29F200B-120EE x8/x16 Flash EEPROM
AM29F200B-120EEB 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF630NS with Lead Free Packaging
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F100B120EC 制造商:AMD 功能描述:*
AM29F100B-120EC 制造商:Advanced Micro Devices 功能描述:
AM29F100B120SC 制造商:AMD 功能描述:New
AM29F100B-120SC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 64K x 16, 44 Pin, Plastic, SOP
AM29F100B90SIT 制造商:AMD 功能描述:New