參數(shù)資料
型號(hào): AM29F100AT-90FC
英文描述: 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ24NL with Standard Packaging
中文描述: x8/x16閃存EEPROM
文件頁(yè)數(shù): 33/39頁(yè)
文件大?。?/td> 728K
代理商: AM29F100AT-90FC
Am29F002B/Am29F002NB
33
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Notes:
1. PA = Program Address, PD = Program Data, DQ7# = complement of data written to device, D
OUT
= data written to device.
2. Figure indicates the last two bus cycles of the command sequence.
Figure 17.
Alternate CE# Controlled Write Operation Timings
相關(guān)PDF資料
PDF描述
AM29F200B-150SI A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package rated at 52 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6617 with Standard Tape and Reel Quantity of 4800
AM29F200BB-120DGE1 75V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU2607Z with Standard Packaging
AM29F200BB-120DGI1 200V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFSL42N20D with Standard Packaging
AM29F200BB-120DPC1 EEPROM
AM29F200BB-120DPE1 EEPROM
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