參數(shù)資料
型號： AM29F100AT-90EE
英文描述： x8/x16 Flash EEPROM
中文描述： x8/x16閃存EEPROM
文件頁數(shù)： 24/39頁
文件大?。?/td> 728K
代理商： AM29F100AT-90EE
24
Am29F002B/Am29F002NB
TEST CONDITIONS
Table 7.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
5.0 V
Device
Under
Test
Figure 8.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
-55
All
others
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
20
ns
Input Pulse Levels
0.0–3.0
0.45–2.4
V
Input timing measurement
reference levels
1.5
0.8, 2.0
V
Output timing measurement
reference levels
1.5
0.8, 2.0
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
相關(guān)PDF資料
PDF描述
AM29F100AT-90EI 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL530N with Standard Packaging
AM29F100AT-90FC 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ24NL with Standard Packaging
AM29F200B-150SI A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package rated at 52 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6617 with Standard Tape and Reel Quantity of 4800
AM29F200BB-120DGE1 75V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU2607Z with Standard Packaging
AM29F200BB-120DGI1 200V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFSL42N20D with Standard Packaging
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F100B120EC 制造商:AMD 功能描述:*
AM29F100B-120EC 制造商:Advanced Micro Devices 功能描述:
AM29F100B120SC 制造商:AMD 功能描述:New
AM29F100B-120SC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 64K x 16, 44 Pin, Plastic, SOP
AM29F100B90SIT 制造商:AMD 功能描述:New
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