參數(shù)資料
型號(hào)： AM29F100AT-90EC
英文描述： 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3102 with Standard Packaging
中文描述： x8/x16閃存EEPROM
文件頁(yè)數(shù)： 31/39頁(yè)
文件大小： 728K
代理商： AM29F100AT-90EC
Am29F002B/Am29F002NB
31
AC CHARACTERISTICS
Enter
Embedded
Erasing
Temporary Sector Unprotect (Am29F002B only)
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
Note:
The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 15.
DQ2 vs. DQ6
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
RESET#
t
VIDR
12 V
0 or 5 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
0 or 5 V
Figure 16.
Temporary Sector Unprotect Timing Diagram (Am29F002B only)
相關(guān)PDF資料
PDF描述
AM29F100AT-90EE x8/x16 Flash EEPROM
AM29F100AT-90EI 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL530N with Standard Packaging
AM29F100AT-90FC 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ24NL with Standard Packaging
AM29F200B-150SI A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package rated at 52 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6617 with Standard Tape and Reel Quantity of 4800
AM29F200BB-120DGE1 75V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU2607Z with Standard Packaging
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F100B120EC 制造商:AMD 功能描述:*
AM29F100B-120EC 制造商:Advanced Micro Devices 功能描述:
AM29F100B120SC 制造商:AMD 功能描述:New
AM29F100B-120SC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 64K x 16, 44 Pin, Plastic, SOP
AM29F100B90SIT 制造商:AMD 功能描述:New
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