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參數(shù)資料
| 型號(hào)： | AM29F100AB-120SE |
| 英文描述： | x8/x16 Flash EEPROM |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁(yè)數(shù)： | 22/39頁(yè) |
| 文件大?。?/td> | 728K |
| 代理商： | AM29F100AB-120SE |
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22
Am29F002B/Am29F002NB
DC CHARACTERISTICS
TTL/NMOS Compatible
Notes:
1. RESET# is not available on Am29F002NB.
2. Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
3. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
4. I
CC
active while Embedded Erase or Embedded Program is in progress.
5. Not 100% tested.
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9, OE#, RESET# Input Load Current
(Notes 1, 5)
V
CC
= V
CC max
;
A9, OE#, RESET# = 12.5 V
50
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Active Read Current (Notes 2, 3)
CE# = V
IL
,
OE#
=
V
IH
20
30
mA
I
CC2
V
CC
Active Write Current (Notes 2, 4, 5) CE# = V
IL
, OE# = V
IH
30
40
mA
I
CC3
V
CC
Standby Current (Note 2)
CE#, OE# = V
IH
0.4
1
mA
I
CC4
V
CC
Reset Current (Notes 1, 2)
RESET# = V
IL
0.4
1
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
+ 0.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 5.0 V
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 12 mA, V
CC
= V
CC min
0.45
V
V
OH
Output High Voltage
I
OH
= –2.5 mA, V
CC
= V
CC min
2.4
V
V
LKO
Low V
CC
Lock-Out Voltage
3.2
4.2
V
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PDF描述 |
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| AM29F100AB-70SE | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F100B120EC | 制造商:AMD 功能描述:* |
| AM29F100B-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F100B120SC | 制造商:AMD 功能描述:New |
| AM29F100B-120SC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 64K x 16, 44 Pin, Plastic, SOP |
| AM29F100B90SIT | 制造商:AMD 功能描述:New |
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