參數(shù)資料
型號(hào)： AM29F080B-90SE
英文描述： 200V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7464 with Lead Free Packaging
中文描述： x8閃存EEPROM的
文件頁(yè)數(shù)： 12/39頁(yè)
文件大?。?/td> 728K
代理商： AM29F080B-90SE
12
Am29F002B/Am29F002NB
COMMAND DEFINITIONS
Writing specific address and data commands or
sequences into the command register initiates device
operations. The Command Definitions table defines the
valid register command sequences. Writing
incorrect
address and data values
or writing them in the
improper sequence
resets the device to reading array
data.
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
“AC Characteristics” section.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or
Embedded Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The
system can read array data using the standard read
timings, except that if it reads at an address within
erase-suspended sectors, the device outputs status
data. After completing a programming operation in the
Erase Suspend mode, the system may once again
read array data with the same exception. See “Erase
Suspend/Erase Resume Commands” for more infor-
mation on this mode.
The system
must
issue the reset command to re-
enable the device for reading array data if DQ5 goes
high, or while in the autoselect mode. See the “Reset
Command” section, next.
See also “Requirements for Reading Array Data” in the
“Device Bus Operations” section for more information.
The Read Operations table provides the read parame-
ters, and Read Operation Timings diagram shows the
timing diagram.
Reset Command
Writing the reset command to the device resets the
device to reading array data. Address bits are don’t
care for this command.
The reset command may be written between the
sequence cycles in an erase command sequence
before erasing begins. This resets the device to reading
array data. Once erasure begins, however, the device
ignores reset commands until the operation is
complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the
sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must
be written to return to reading array data (also applies
to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to
reading array data (also applies during Erase
Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
The Command Definitions table shows the address
and data requirements. This method is an alternative to
that shown in the Autoselect Codes (High Voltage
Method) table, which is intended for PROM program-
mers and requires V
ID
on address bit A9.
The autoselect command sequence is initiated by
writing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect
mode, and the system may read at any address any
number of times, without initiating another command
sequence.
A read cycle at address XX00h or retrieves the manu-
facturer code. A read cycle at address XX01h returns
the device code. A read cycle containing a sector
address (SA) and the address 02h in returns 01h if that
sector is protected, or 00h if it is unprotected. Refer to
the Sector Address tables for valid sector addresses.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Byte Program Command Sequence
Programming is a four-bus-cycle operation. The
program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program
algorithm. The system is
not
required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verify the pro-
grammed cell margin. The Command Definitions take
shows the address and data requirements for the byte
program command sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and
addresses are no longer latched. The system can
determine the status of the program operation by using
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F080B-90SF 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:IC, FLASH MEM, 8MBIT, 90NS, 44-SOIC, Memory Type:Flash - NOR, Memory Size:8Mbit,
AM29F080B-90SI 制造商:Advanced Micro Devices 功能描述:
AM29F100B120EC 制造商:AMD 功能描述:*
AM29F100B-120EC 制造商:Advanced Micro Devices 功能描述:
AM29F100B120SC 制造商:AMD 功能描述:New
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