參數(shù)資料
型號(hào)： AM29F080-150SE
英文描述： 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL3303S with Standard Packaging
中文描述： x8閃存EEPROM的
文件頁(yè)數(shù)： 14/39頁(yè)
文件大?。?/td> 728K
代理商： AM29F080-150SE
14
Am29F002B/Am29F002NB
interrupts can be re-enabled after the last Sector Erase
command is written. If the time between additional
sector erase commands can be assumed to be less
than 50 μs, the system need not monitor DQ3.
Any
command other than Sector Erase or Erase
Suspend during the time-out period resets the
device to reading array data.
The system must
rewrite the command sequence and any additional
sector addresses and commands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector Erase
Timer” section.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. On the Am29F002B only, note that a
hard-
ware reset
during the sector erase operation
immediately terminates the operation. The Sector
Erase command sequence should be reinitiated once
the device has returned to reading array data, to
ensure data integrity.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6, or
DQ2. Refer to “Write Operation Status” for information
on these status bits.
Figure 3 illustrates the algorithm for the erase opera-
tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
the Sector Erase Operations Timing diagram for timing
waveforms.
Notes:
1. See the appropriate Command Definitions table for erase
command sequence.
2.
See “DQ3: Sector Erase Timer” for more information.
Figure 3.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料
PDF描述
AM29F080-150SEB 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL3303S with Lead Free Packaging
AM29F080B-150SE 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU8113 with Lead Free Packaging
AM29F080B-55EC 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010NL with Standard Packaging
AM29F080B-55EI 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ48NL with Standard Packaging
AM29F080B-55FC 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ44Z with Standard Packaging
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F080B-120EC 制造商:Advanced Micro Devices 功能描述:
AM29F080B-120EF 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M x 8bit 120ns 40-Pin TSOP
AM29F080B-120SC 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,1MX8,CMOS,SOP,44PIN,PLASTIC
AM29F080B-120SC/T 制造商:Spansion 功能描述:FLASH PARALLEL 5V 8MBIT 1MX8 120NS 44SOIC - Rail/Tube
AM29F080B-55EF 功能描述:閃存 8M (1MX8) 55ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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