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| 型號(hào)： | AM29F040B-55JI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 512K X 8 FLASH 5V PROM, 55 ns, PQCC32 |
| 封裝： | PLASTIC, MO-052AE, LCC-32 |
| 文件頁(yè)數(shù)： | 18/30頁(yè) |
| 文件大?。?/td> | 403K |
| 代理商： | AM29F040B-55JI |
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18
Am29F040B
P R E L I M I N A R Y
DC CHARACTERISTICS
TTL/NMOS Compatible
CMOS Compatible
Notes for DC Characteristics (both tables):
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 6 MHz).
The frequency component typically is less than 2 mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. Not 100% tested.
4. For CMOS mode only, I
CC3
= 20 μA max at extended temperatures (> +85°C).
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
Unit
I
LI
I
LIT
I
LO
I
CC1
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max
V
CC
= V
CC
Max, A9 = 12.5 V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max
CE# = V
IL,
OE# = V
IH
±1.0
μA
A9 Input Load Current
50
μA
Output Leakage Current
±1.0
μA
V
CC
Active Read Current (Note 1)
V
CC
Active Write (Program/Erase)
Current (Notes 2, 3)
20
30
mA
I
CC2
CE#
= V
IL,
OE# =
V
IH
30
40
mA
I
CC3
V
IL
V
IH
V
CC
Standby Current
Input Low Level
V
CC
= V
CC
Max, CE# = V
IH
0.4
1.0
mA
–0.5
0.8
V
Input High Level
2.0
V
CC
+ 0.5
V
V
ID
Voltage for Autoselect
and Sector Protect
V
CC
= 5.25 V
10.5
12.5
V
V
OL
V
OH
V
LKO
Output Low Voltage
I
OL
= 12 mA, V
CC
= V
CC
Min
I
OH
= –2.5 mA, V
CC
= V
CC
Min
0.45
V
Output High Level
2.4
V
Low V
CC
Lock-Out Voltage
3.2
4.2
V
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
Unit
I
LI
I
LIT
I
LO
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max
V
CC
= V
CC
Max, A9 = 12.5 V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max
±
1.0
μA
A9 Input Load Current
50
μA
Output Leakage Current
±
1.0
μA
I
CC1
V
CC
Active Read Current
(Note 1)
CE# = V
IL,
OE# = V
IH
20
30
mA
I
CC2
V
CC
Active Program/Erase Current
(Notes 2, 3)
CE#
= VIL,
OE#
= VIH
30
40
mA
I
CC3
V
IL
V
IH
V
CC
Standby Current (Note 4)
Input Low Level
V
CC
= V
CC
Max, CE# = V
CC
± 0.5 V
1
5
μA
–0.5
0.8
V
Input High Level
0.7 x V
CC
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect and Sector
Protect
V
CC
= 5.25 V
10.5
12.5
V
V
OL
V
OH1
V
OH2
V
LKO
Output Low Voltage
I
OL
= 12.0 mA, V
CC
= V
CC
Min
I
OH
= –2.5 mA, V
CC
= V
CC
Min
I
OH
= –100
μ
A, V
CC
= V
CC
Min
0.45
V
Output High Voltage
0.85 V
CC
V
CC
–0.4
3.2
V
V
Low V
CC
Lock-out Voltage
4.2
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F040B-55JIB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F040B-55PC | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F040B-55PCB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F040B-55PE | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F040B-55PEB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F040B-70ED | 制造商:Spansion 功能描述:IC SM FLASH 5V 4MB 制造商:Spansion 功能描述:IC, SM, FLASH, 5V, 4MB |
| AM29F040B-70ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29F040B-70ED\T | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 70ns 32-Pin TSOP T/R |
| AM29F040B-70EE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 70ns 32-Pin TSOP |
| AM29F040B-70EF | 功能描述:閃存 4M (512Kx8) 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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