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| 型號(hào)： | AM29F040B-120ECB |
| 廠(chǎng)商： | ADVANCED MICRO DEVICES INC |
| 元件分類(lèi)： | PROM |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 512K X 8 FLASH 5V PROM, 120 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁(yè)數(shù)： | 18/30頁(yè) |
| 文件大?。?/td> | 394K |
| 代理商： | AM29F040B-120ECB |
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18
Am29F040B
P R E L I M I N A R Y
DC CHARACTERISTICS
TTL/NMOS Compatible
CMOS Compatible
Notes for DC Characteristics (both tables):
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 6 MHz).
The frequency component typically is less than 2 mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. Not 100% tested.
4. For CMOS mode only, I
CC3
= 20 μA max at extended temperatures (> +85°C).
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
Unit
I
LI
I
LIT
I
LO
I
CC1
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max
V
CC
= V
CC
Max, A9 = 12.5 V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max
CE# = V
IL,
OE# = V
IH
±1.0
μA
A9 Input Load Current
50
μA
Output Leakage Current
±1.0
μA
V
CC
Active Read Current (Note 1)
V
CC
Active Write (Program/Erase)
Current (Notes 2, 3)
20
30
mA
I
CC2
CE#
= V
IL,
OE# =
V
IH
30
40
mA
I
CC3
V
IL
V
IH
V
CC
Standby Current
Input Low Level
V
CC
= V
CC
Max, CE# = V
IH
0.4
1.0
mA
–0.5
0.8
V
Input High Level
2.0
V
CC
+ 0.5
V
V
ID
Voltage for Autoselect
and Sector Protect
V
CC
= 5.25 V
10.5
12.5
V
V
OL
V
OH
V
LKO
Output Low Voltage
I
OL
= 12 mA, V
CC
= V
CC
Min
I
OH
= –2.5 mA, V
CC
= V
CC
Min
0.45
V
Output High Level
2.4
V
Low V
CC
Lock-Out Voltage
3.2
4.2
V
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
Unit
I
LI
I
LIT
I
LO
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max
V
CC
= V
CC
Max, A9 = 12.5 V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max
±
1.0
μA
A9 Input Load Current
50
μA
Output Leakage Current
±
1.0
μA
I
CC1
V
CC
Active Read Current
(Note 1)
CE# = V
IL,
OE# = V
IH
20
30
mA
I
CC2
V
CC
Active Program/Erase Current
(Notes 2, 3)
CE#
= VIL,
OE#
= VIH
30
40
mA
I
CC3
V
IL
V
IH
V
CC
Standby Current (Note 4)
Input Low Level
V
CC
= V
CC
Max, CE# = V
CC
± 0.5 V
1
5
μA
–0.5
0.8
V
Input High Level
0.7 x V
CC
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect and Sector
Protect
V
CC
= 5.25 V
10.5
12.5
V
V
OL
V
OH1
V
OH2
V
LKO
Output Low Voltage
I
OL
= 12.0 mA, V
CC
= V
CC
Min
I
OH
= –2.5 mA, V
CC
= V
CC
Min
I
OH
= –100
μ
A, V
CC
= V
CC
Min
0.45
V
Output High Voltage
0.85 V
CC
V
CC
–0.4
3.2
V
V
Low V
CC
Lock-out Voltage
4.2
V
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PDF描述 |
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| Am29F040B-90 | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
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| AM29F040B-120JEB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-120JI | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F040B-120ED | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 120ns 32-Pin TSOP 制造商:Spansion 功能描述:Flash Memory IC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP |
| AM29F040B-120EE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 120ns 32-Pin TSOP |
| AM29F040B120JC | 制造商:AMD 功能描述:* 制造商:Advanced Micro Devices 功能描述: |
| AM29F040B-120JC | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 120ns 32-Pin PLCC 制造商:Advanced Micro Devices 功能描述: 制造商:Spansion 功能描述:IC, FLASH MEM, 4MBIT, 120NS, 32-PLCC, Memory Type:Flash - NOR, Memory Size:4Mbit 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, PLCC 制造商:Advanced Micro Devices 功能描述:IC,EEPROM,NOR FLASH,512KX8,CMOS,LDCC,32PIN,PLASTIC, TandR |
| AM29F040B-120JC\T | 制造商:Advanced Micro Devices 功能描述:IC,EEPROM,NOR FLASH,512KX8,CMOS,LDCC,32PIN,PLASTIC, TandR |
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