參數(shù)資料
型號: AM29F040B-120EC
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 512K X 8 FLASH 5V PROM, 120 ns, PDSO32
封裝: MO-142BD, TSOP-32
文件頁數(shù): 17/33頁
文件大?。?/td> 446K
代理商: AM29F040B-120EC
Am29F040
17
Note:
DQ6 is rechecked even if DQ5 = “1” because DQ6 may stop toggling at the same time as DQ5 changing to “1”.
Figure 5.
Toggle Bit Algorithm
Figure 6.
Maximum Negative Overshoot Waveform
Figure 7.
Maximum Positive Overshoot Waveform
Start
Fail
Yes
DQ6 = Data
Yes
Pass
No
No
Yes
DQ6 = Data
DQ5 = 1
No
Read Byte
(DQ0–DQ7)
Addr = VA
Read Byte
(DQ0–DQ7)
Addr = VA
VA=Byte address for programming
=Any of the sector addresses within the
sector being erased during sector erase
operation
=XXXXH during chip erase
17113E-10
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
17113E-11
20 ns
V
CC
+ 0.5 V
2.0 V
20 ns
20 ns
V
CC
+ 2.0 V
17113E-12
相關(guān)PDF資料
PDF描述
AM29F040B-120EE 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040-55EC 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55EEB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55EIB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55FCB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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