參數(shù)資料
型號(hào)： AM29F040-70PE
廠(chǎng)商： Advanced Micro Devices, Inc.
英文描述： 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述： 4兆位（524,288 × 8位）的CMOS 5.0伏只，扇區(qū)擦除閃存
文件頁(yè)數(shù)： 20/33頁(yè)
文件大?。?/td> 190K
代理商： AM29F040-70PE
20
Am29F040
DC CHARACTERISTICS (continued)
CMOS Compatible
Notes:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 6 MHz).
The frequency component typically is less than 2 mA/MHz, with OEat V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. Not 100% tested.
4. I
CC3
= 20
μ
A max at extended temperatures (> +85
°
C).
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max
±
1.0
μ
A
I
LIT
A9 Input Load Current
V
CC
= V
CC
Max, A9 = 12.5 V
50
μ
A
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max
±
1.0
μ
A
I
CC1
V
CC
Active Read Current
(Note 1)
CE = V
IL,
OE = V
IH
20
30
mA
I
CC2
V
CC
Active Program/Erase
Current (Notes 2, 3)
CE
= VIL,
OE
= VIH
30
40
mA
I
CC3
V
CC
Standby Current (Note 4)
V
CC
= V
CC
Max, CE = V
CC
±
0.5 V
1
5
μ
A
V
IL
Input Low Level
–0.5
0.8
V
V
IH
Input High Level
0.7 x V
CC
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect and
Sector Protect
V
CC
= 5.25 V
10.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 12.0 mA, V
CC
= V
CC
Min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.5 mA, V
CC
= V
CC
Min
0.85 V
CC
V
V
OH2
I
OH
= –100
μ
A, V
CC
= V
CC
Min
V
CC
–0.4
V
V
LKO
Low V
CC
Lock-out Voltage
3.2
4.2
V
相關(guān)PDF資料
PDF描述
AM29F040-70PEB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-70PI 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-70PIB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-90EC 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-90ECB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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