參數(shù)資料
型號(hào)： AM29F032B-120SE
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述： 4M X 8 FLASH 5V PROM, 120 ns, PDSO44
封裝： MO-180AA, SOP-44
文件頁(yè)數(shù)： 17/39頁(yè)
文件大?。?/td> 937K
代理商： AM29F032B-120SE
16
Am29F032B
minates the time-out period and suspends the erase
operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sec-
tors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “The Erase Resume command is valid only during
the Erase Suspend mode.” for information on these
status bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data within
non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program oper-
ation. See “The Erase Resume command is valid only
during the Erase Suspend mode.” for more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the de-
vice has resumed erasing.
Notes:
1. See the appropriate Command Definitions table for erase
command sequence.
2.
See “DQ3: Sector Erase Timer” for more information.
Figure 3.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料
PDF描述
AM29F032B-120SI 32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F032B-150 32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F032B-150EC 32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F032B-150EE 32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F032B-150EI 32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F032B75ED 制造商:Advanced Micro Devices 功能描述:
AM29F032B-75EF 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:32M (4M X 8-BIT) 5V FLSH SCTR 制造商:Spansion 功能描述:IC, FLASH MEM, 32MBIT, 75NS, 40-TSOP, Memory Type:Flash - NOR, Memory Size:32Mbi
AM29F032B-75EF\\T 制造商:Spansion 功能描述:32M (4MX8) 5V, UNIFORM SECTOR, TSOP40, IND, HAZMAT TR - Tape and Reel
AM29F032B-75EF\T 制造商:Spansion 功能描述:32M (4MX8) 5V, UNIFORM SECTOR, TSOP40, IND, HAZMAT TR - Tape and Reel
AM29F032B-75SF 功能描述:閃存 32M (4MX8) 75ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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