參數(shù)資料
型號: AM29F017D-70EE
廠商: Spansion Inc.
英文描述: LM140L/LM340L Series 3-Terminal Positive Regulators; Package: TO-92; No of Pins: 3; Qty per Container: 1800; Container: Box
中文描述: 16兆位(2米× 8位)的CMOS 5.0伏只,統(tǒng)一部門快閃記憶體
文件頁數(shù): 29/44頁
文件大小: 1021K
代理商: AM29F017D-70EE
34
Am29F017D
AC CHARACTERISTICS
Temporary Sector Unprotect
Note: Not 100% tested.
Parameter
All Speed Options
JEDEC
Std
Description
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
s
Enter
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Program
Resume
Embedded
Erasing
Note: The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the
erase-suspended sector.
Figure 15.
DQ2 vs. DQ6
RESET#
tVIDR
12 V
0 or 5 V
CE#
WE#
RY/BY#
tVIDR
tRSP
Program or Erase Command Sequence
0 or 5 V
Figure 16.
Temporary Sector Group Unprotect Timing Diagram
相關(guān)PDF資料
PDF描述
AM29F017D-70EI LM140L/LM340L Series 3-Terminal Positive Regulators; Package: TO-92; No of Pins: 3; Qty per Container: 1800; Container: Box
AM29BDS640GTD4WSI 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29PDL127H88PCI 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
AM29PDL127H88VKIN 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
AM29PDL127H 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
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