參數(shù)資料
型號: Am29F017B-90EIB
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 16兆位(2米× 8位)的CMOS 5.0伏只,統(tǒng)一部門快閃記憶體
文件頁數(shù): 23/35頁
文件大?。?/td> 443K
代理商: AM29F017B-90EIB
Am29F017B
23
P R E L I M I N A R Y
TEST CONDITIONS
Table 7.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
5.0 V
Device
Under
Test
21195B-12
Figure 8.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
All speed
options
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
100
pF
Input Rise and Fall Times
20
ns
Input Pulse Levels
0.45–2.4
V
Input timing measurement
reference levels
0.8
V
Output timing measurement
reference levels
2.0
V
KS000010-PAL
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
相關(guān)PDF資料
PDF描述
AM29F017B-90FC 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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