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參數(shù)資料
| 型號： | AM29F017B-75E4I |
| 英文描述： | x8 Flash EEPROM |
| 中文描述： | x8閃存EEPROM的 |
| 文件頁數(shù)： | 39/39頁 |
| 文件大小： | 728K |
| 代理商： | AM29F017B-75E4I |
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Am29F002B/Am29F002NB
39
REVISION SUMMARY
Revision A (July 1998)
Initial release.
Revision B (January 1999)
Distinctive Characteristics
Added:
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
AC Characterisitics—Read Operations Table
t
EHQZ
, t
GHQZ
: Changed the 55 speed option to 15 ns
from 20 ns
AC Characteristics—Erase/Program Operations
t
WLAX
: Changed the 90 speed option to 45 ns from 50 ns.
t
DVWH
: Changed the 55 speed option to 25 ns from 30 ns.
t
WLWH
: changed the 55 speed option to 30 ns from 35 ns.
AC Characteristics—Alternate CE# Controlled
Erase/Program Operations
t
DVEH
: Changed the 55 speed option to 25 ns from 30 ns.
t
ELEH
: Changed the 55 speed option to 30 ns from 35 ns.
t
ELAX
: Changed the 90 speed option to 45 ns from 50 ns.
DC Characteristics—TTL/NMOS Compatible
I
CC1
, I
CC2
, I
CC3
,
I
CC4
: Added Note 2 “Maximum I
CC
specifications are tested with V
CC
= V
CCmax
”.
DC Characteristics—CMOS Compatible
I
CC1
, I
CC2
, I
CC3
,
I
CC4
: Added Note 2 “Maximum I
CC
specifications are tested with V
CC
= V
CCmax
”.
Revision C (November 12, 1999)
AC Characteristics—Figure 11. Program
Operations Timing and Figure 12. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision D (November 28, 2000)
Global
Added table of contents.
Ordering Information
Deleted burn-in option.
Table 5, Command Definitions
In Note
4, changed the lower address bit of don’t care
range to A11.
Trademarks
Copyright 2000 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F017B-75EC | x8 Flash EEPROM |
| AM29F017B-75EI | 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ44NS with Lead Free Packaging |
| AM29F017B-75F4C | x8 Flash EEPROM |
| AM29F017B-75F4I | 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF3415 with Standard Packaging |
| AM29F017B-75FC | 250V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR12N25D with Lead Free Packaging |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F017B-90EC | 制造商:Advanced Micro Devices 功能描述:2M X 8 FLASH 5V PROM, 90 ns, PDSO48 |
| AM29F017B-90FC | 制造商:Advanced Micro Devices 功能描述:2M X 8 FLASH 5V PROM, 90 ns, PDSO48 |
| AM29F017D-120EC | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 120NS 48TSOP - Trays |
| AM29F017D-70FI | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 70NS 48TSOP - Trays |
| am29f017d-90fc/t | 制造商:Advanced Micro Devices 功能描述: |
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