參數(shù)資料
型號(hào)： Am29F016D-150EIB
廠商： Advanced Micro Devices, Inc.
英文描述： MAGNIFIER DBL CLAMP W/STAND
中文描述： 16兆位（2米× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體
文件頁數(shù)： 27/45頁
文件大?。?/td> 1145K
代理商： AM29F016D-150EIB
26
Am29F016D
DC CHARACTERISTICS
TTL/NMOS Compatible
CMOS Compatible
Notes for DC Characteristics (both tables):
1. The I
CC
current is typically less than 1 mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Program or Embedded Erase algorithm is in progress.
3. Not 100% tested.
4. For CMOS mode only I
CC3
, I
CC4
= 20 μA at extended temperature (>+85°C).
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
±
1.0
50
±
1.0
40
Unit
I
LI
I
LIT
I
LO
I
CC1
I
CC2
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max
V
CC
= V
CC
Max, A9 = 12.5 V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max
CE# = V
IL,
OE# = V
IH
CE#
=
V
IL,
OE#
=
V
IH
V
CC
= V
CC
Max, CE# = V
IH
,
RESET#
=
V
IH
μA
A9 Input Load Current
μA
Output Leakage Current
μA
V
CC
Read Current (Note 1)
V
CC
Write Current (Notes 2, 3)
V
CC
Standby Current
(CE# Controlled)
25
mA
40
60
mA
I
CC3
0.4
1.0
mA
I
CC4
V
CC
Standby Current
(RESET# Controlled)
V
CC
= V
CC
Max, RESET# = V
IL
0.4
1.0
mA
V
IL
V
IH
Input Low Level
–0.5
0.8
V
Input High Level
2.0
V
CC
+ 0.5
V
V
ID
Voltage for Autoselect and Sector
Protect
V
CC
= 5.0 V
11.5
12.5
V
V
OL
V
OH
V
LKO
Output Low Voltage
I
OL
= 12 mA, V
CC
= V
CC
Min
I
OH
= –2.5 mA V
CC
= V
CC
Min
0.45
V
Output High Level
2.4
V
Low V
CC
Lock-out Voltage
3.2
4.2
V
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
±
1.0
50
±
1.0
40
Unit
I
LI
I
LIT
I
LO
I
CC1
I
CC2
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max
V
CC
= V
CC
Max, A9 = 12.5 V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max
CE# = V
IL,
OE# = V
IH
CE#
= V
IL,
OE#
= V
IH
V
CC
=
V
CC
Max,
CE#
=
V
CC
±
0.5 V,
RESET#
=
V
CC
±
0.5 V
V
CC
= V
CC
Max,
RESET# = V
SS
±
0.5 V
μA
A9 Input Load Current
μA
Output Leakage Current
μA
V
CC
Read Current (Note 1)
V
CC
Write Current (Notes 2, 3)
V
CC
Standby Current
(CE# Controlled) (Note 4)
25
mA
30
40
mA
I
CC3
1
5
μA
I
CC4
V
CC
Standby Current
(RESET# Controlled) (Note 4)
1
5
μA
V
IL
V
IH
Input Low Level
–0.5
0.8
V
Input High Level
0.7x V
CC
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect
and Sector Protect
V
CC
= 5.0 V
11.5
12.5
V
V
OL
V
OH1
V
OH2
V
LKO
Output Low Voltage
I
OL
= 12 mA, V
CC
= V
CC
Min
I
OH
= –2.5 mA, V
CC
= V
CC
Min
I
OH
= –100
μ
A, V
CC
= V
CC
Min
0.45
V
Output High Voltage
0.85 V
CC
V
CC
– 0.4
3.2
V
V
Low V
CC
Lock-out Voltage
4.2
V
相關(guān)PDF資料
PDF描述
Am29F016D-120FIB 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Am29F016D-150FIB 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Am29F016D-70FCB 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Am29F016D-90FCB FLEX CONN, 1.0 MM, SMT, LIF, STRAIGHT, 4 POSITION. WITH PICK AND PLACE TAPE, T&R RoHS Compliant: Yes
Am29F016D-120FCB 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F016D-70E4D 制造商:SOCO 功能描述:
AM29F016D-70E4F 功能描述:閃存 16M (2MX8) 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F016D-70EF 功能描述:閃存 16M (2MX8) 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F016D-70EI 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 70ns 48-Pin TSOP
AM29F016D70FI 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 70ns 48-Pin RTSOP
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