參數(shù)資料
型號(hào): AM29F016D-150E4I
廠商: ADVANCED MICRO DEVICES INC
元件分類(lèi): PROM
英文描述: 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 2M X 8 FLASH 5V PROM, 150 ns, PDSO40
封裝: MO-142CD, TSOP-40
文件頁(yè)數(shù): 21/45頁(yè)
文件大小: 1145K
代理商: AM29F016D-150E4I
20
Am29F016D
Command Definitions
Table 9.
Am29F016D Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on
the rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode)
or erased. Address bits A20–A16 select a unique sector.
SGA = Address of the sector group to be verified. Address
bits A20–A18 select a unique sector group.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus
cycles are write operations.
4. Address bits A20–A11 are don’t cares for unlock and
command cycles, unless SA or PA required.
5. No unlock or command cycles required when reading
array data.
6. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5
goes high (while the device is providing status data).
7. The fourth cycle of the autoselect command sequence is
a read cycle.
8. The data is 00h for an unprotected sector group and 01h
for a protected sector group.See “Autoselect Command
Sequence” for more information.
9. Command s valid when device is ready to read array data
or when device is in autoselect mode.
10. The Unlock Bypass command is required prior to the
Unlock Bypass Program command.
11. The Unlock Bypass Reset command is required to return
to reading array data when the device is in the unlock
bypass mode.
12. The system may read and program in non-erasing
sectors, or enter the autoselect mode, when in the Erase
Suspend mode. The Erase Suspend command is valid
only during a sector erase operation.
13. The Erase Resume command is valid only during the
Erase Suspend mode.
Command
Sequence
(Note 1)
C
Bus Cycles (Notes 2–4)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr Data
Addr
Data
Read (Note 5)
1
RA
RD
Reset (Note 6)
1
XXX
F0
Autoselect
(Note 7)
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
01
Device ID
4
555
AA
2AA
55
555
90
X01
AD
Sector Group Protect
Verify (Note 8)
4
555
AA
2AA
55
555
90
SGA
X02
XX00
XX01
CFI Query (Note 9)
1
55
98
Program
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program (Note 10)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 11)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend (Note 9)
1
XXX
B0
Erase Resume (Note 10)
1
XXX
30
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AM29F016D-150EI 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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AM29F016D-70EF 功能描述:閃存 16M (2MX8) 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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