參數(shù)資料
型號(hào): Am29F016D-120E4CB
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 16兆位(2米× 8位)的CMOS 5.0伏只,統(tǒng)一部門快閃記憶體
文件頁數(shù): 45/45頁
文件大小: 1145K
代理商: AM29F016D-120E4CB
Am29F016D
44
Revision E (May 19, 2000)
Global
Changed part number to Am29F016D. This reflects the
new 0.23 μm process technology upon which this de-
vice will now be built.
The Am29F016D is compatible with the previous 0.32
μm Am29F016B device, with the exception of the sec-
tor group protect and unprotect algorithms. These algo-
rithms are provided in a seperate document. Contact
AMD for more information or to request a copy of that
document.
This data sheet will be marked preliminary until the de-
vice has been in full production for a number of months.
The -75 speed option (70 ns, ±5% V
CC
) has been re-
placed by a -70 speed option (70 ns, ±10 V
CC
).
The burn-in option is no longer available.
The device now has the Unlock Bypass Program fea-
ture.
The publication number of the document describing
sector protection/unprotection implementation is now
23922.
Revision E+1 (December 4, 2000)
Global
Added table of contents. Removed Preliminary status
from document.
Revision E+2 (March 23, 2001)
Common Flash Memory Interface (CFI)
Added section.
Table 9, Am29F016D Command Definitions
Corrected the addresses for the three-cycle unlock by-
pass command sequence. Added Note 9 and CFI
Query command to table.
Copyright 2001 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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