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參數(shù)資料
| 型號： | AM29F016B |
| 廠商： | Advanced Micro Devices, Inc. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | LM3350 Switched Capacitor Voltage Converter; Package: MINI SOIC; No of Pins: 8; Qty per Container: 3500; Container: Reel |
| 中文描述： | 16兆位（2米× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體 |
| 文件頁數(shù)： | 38/38頁 |
| 文件大?。?/td> | 477K |
| 代理商： | AM29F016B |
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38
Am29F016B
P R E L I M I N A R Y
REVISION SUMMARY FOR AM29F016B
Revision B
Global
Made formatting and layout consistent with other data
sheets. Used updated common tables and diagrams.
Revision B+1
AC Characteristics—Read-only Operations
Deleted note referring to output driver disable time.
Figure 16—Temporary Sector Group Unprotect
Timings
Corrected title to indicate “sector group.”
Revision B+2
Global
Added -70 speed option, deleted -75 speed option.
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
Ordering Information
Added extended temperature availability to -90, -120,
and -150 speed options.
Operating Ranges
Added extended temperature range.
DC Characteristics, CMOS Compatible
Corrected the CE# and RESET# test conditions for
I
CC3
and I
CC4
to V
CC
±0.5 V.
AC Characteristics
Erase/Program Operations; Erase and Program Oper-
ations Alternate CE# Controlled Writes:
Corrected the
notes reference for t
WHWH1
and t
WHWH2
. These param-
eters are 100% tested. Corrected the note reference for
t
VCS
. This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29F016B-70E4EB | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F016B-70SEB | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F016B-70E4C | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F016B-70E4E | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F016B-70E4I | LM3352 Regulated 200 mA Buck-Boost Switched Capacitor DC/DC Converter; Package: TSSOP; No of Pins: 16; Qty per Container: 92; Container: Rail |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F016B-120DGC1 | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 120NS DIE - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F016B-120DPC1 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die |
| AM29F016B120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F016B-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F016B90EC | 制造商:Advanced Micro Devices 功能描述: |
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