參數(shù)資料
型號(hào): AM29F016B-75F4C
英文描述: x8 Flash EEPROM
中文描述: x8閃存EEPROM的
文件頁(yè)數(shù): 33/39頁(yè)
文件大?。?/td> 728K
代理商: AM29F016B-75F4C
Am29F002B/Am29F002NB
33
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Notes:
1. PA = Program Address, PD = Program Data, DQ7# = complement of data written to device, D
OUT
= data written to device.
2. Figure indicates the last two bus cycles of the command sequence.
Figure 17.
Alternate CE# Controlled Write Operation Timings
相關(guān)PDF資料
PDF描述
AM29F016B-75F4CB 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF3717 with Standard Packaging
AM29F016B-75F4I 40V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3504 with Standard Packaging
AM29F016B-75F4IB 40V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3504 with Lead Free Packaging
AM29F016B-75FC 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFSL4610 with Standard Packaging
AM29F016B-75FCB A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6619 with Standard Tape and Reel Quantity of 4800
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