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| 型號： | AM29F016B-1 |
| 廠商： | Advanced Micro Devices, Inc. |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | LM3351 Switched Capacitor Voltage Converter; Package: MINI SOIC; No of Pins: 8; Qty per Container: 1000; Container: Reel |
| 中文描述： | 16兆位（2米× 8位）的CMOS 5.0伏只，扇區(qū)擦除快閃記憶體模修訂1 |
| 文件頁數(shù)： | 12/36頁 |
| 文件大?。?/td> | 219K |
| 代理商： | AM29F016B-1 |
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12
Am29F016
Table 5.
Am29F016 Command Definitions
Notes:
1. Bus operations are defined in Table 1.
2. RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse.
SA= Address of the sector to be erased. The combination of A20, A19, A18, A17, and A16 will uniquely select any sector.
3. RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE
4. Read and Byte program functions to non-erasing sectors are allowed in the Erase Suspend mode.
5.
Address bits A15, A14, A13, A12 and A11 = X, X = don’t care.
Read/Reset Command
The read or reset operation is initiated by writing the
read/reset command sequence into the command reg-
ister. Microprocessor read cycles retrieve array data
from the memory. The device remains enabled for
reads until the command register contents are altered.
The device will automatically power-up in the read/
reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read
cycles will retrieve array data. This default value en-
sures that no spurious alteration of the memory content
occurs during the power transition. Refer to the AC
Read Characteristics and Waveforms for the specific
timing parameters.
Autoselect Command
Flash memories are intended for use in applications
where the local CPU can alter memory contents. As
such, manufacture and device codes must be
accessible while the device resides in the target sys-
tem. PROM programmers typically access the signa-
ture codes by raising A9 to a high voltage. However,
multiplexing high voltage onto the address lines is not
generally a desirable system design practice.
The device contains an autoselect command operation
to supplement traditional PROM programming
methodology. The operation is initiated by writing the
autoselect command sequence into the command reg-
ister. Following the command write, a read cycle from
address XX00H retrieves the manufacturer code of
01H. A read cycle from address XX01H returns the de-
vice code ADH (see Table 2).
All manufacturer and device codes will exhibit odd par-
ity with DQ7 defined as the parity bit.
Furthermore, the write protect status of sectors can be
read in this mode. Scanning the sector group
addresses (A18, A19, and A20) while (A6, A1, A0) = (0,
1, 0) will produce a logical “1” at device output DQ0 for
a protected sector group.
To terminate the operation, it is necessary to write the
read/reset command sequence into the register.
Byte Programming
The device is programmed on a byte-by-byte basis.
Programming is a four bus cycle operation. There are
two “unlock” write cycles. These are followed by the
program set-up command and data write cycles. Ad-
dresses are latched on the falling edge of CE or WE,
whichever happens later and the data is latched on the
rising edge of CE or WE, whichever happens first. The
rising edge of CE or WE (whichever happens first) be-
gins programming using the Embedded Program Algo-
Command
Sequence
Read/Reset
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Second Bus
Write Cycle
Third Bus
Write Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Reset/Read
1
XXXXH
F0H
Reset/Read
3
5555H
AAH
2AAAH
55H
5555H
F0H
RA
RD
Autoselect
3
5555H
AAH
2AAAH
55H
5555H
90H
Byte Program
4
5555H
AAH
2AAAH
55H
5555H
A0H
PA
Data
Chip Erase
6
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH 55H
5555H
10H
Sector Erase
6
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH 55H
SA
30H
Erase Suspend
1
XXXXH
B0H
Erase Resume
1
XXXXH
30H
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