參數(shù)資料
型號(hào)： AM29F016B-150EI
英文描述： x8 Flash EEPROM
中文描述： x8閃存EEPROM的
文件頁(yè)數(shù)： 1/39頁(yè)
文件大?。?/td> 728K
代理商： AM29F016B-150EI
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21527
Issue Date:
November 28, 2000
Rev:
D
Amendment/
0
Am29F002B/Am29F002NB
2 Megabit (256 K x 8-Bit)
CMOS 5.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— 5.0 Volt-only operation for read, erase, and
program operations
— Minimizes system level requirements
I
Manufactured on 0.32 μm process technology
— Compatible with 0.5 μm Am29F002 device
I
High performance
— Access times as fast as 55 ns
I
Low power consumption (typical values at
5 MHz)
— 1 μA standby mode current
— 20 mA read current
— 30 mA program/erase current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write cycle guarantee per
sector
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
I
Package option
— 32-pin PDIP
— 32-pin TSOP
— 32-pin PLCC
I
Compatibility with JEDEC standards
— Pinout and software compatible with
single-power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data (not available on Am29F002NB)
相關(guān)PDF資料
PDF描述
AM29F016B-150F4C x8 Flash EEPROM
AM29F016B-150F4E A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6614 with Standard Tape and Reel Quantity of 4800
AM29F016B-150F4EB EEPROM
AM29F016B-150F4I x8 Flash EEPROM
AM29F016B-150FC 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ44VZS with Standard Packaging
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F016B90EC 制造商:Advanced Micro Devices 功能描述:
AM29F016B-90EC 制造商:Advanced Micro Devices 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 90ns 48-Pin TSOP 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 48-Pin TSOP
AM29F016B-90SC 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 44-Pin SOP
AM29F016D-120DPC 1 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die
AM29F016D-120DPI 1 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die
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