參數(shù)資料
型號(hào)： AM29F016B-120E4EB
英文描述： 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL2505 with Standard Packaging
中文描述： EEPROM的
文件頁(yè)數(shù)： 1/39頁(yè)
文件大?。?/td> 728K
代理商： AM29F016B-120E4EB
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21527
Issue Date:
November 28, 2000
Rev:
D
Amendment/
0
Am29F002B/Am29F002NB
2 Megabit (256 K x 8-Bit)
CMOS 5.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— 5.0 Volt-only operation for read, erase, and
program operations
— Minimizes system level requirements
I
Manufactured on 0.32 μm process technology
— Compatible with 0.5 μm Am29F002 device
I
High performance
— Access times as fast as 55 ns
I
Low power consumption (typical values at
5 MHz)
— 1 μA standby mode current
— 20 mA read current
— 30 mA program/erase current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write cycle guarantee per
sector
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
I
Package option
— 32-pin PDIP
— 32-pin TSOP
— 32-pin PLCC
I
Compatibility with JEDEC standards
— Pinout and software compatible with
single-power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data (not available on Am29F002NB)
相關(guān)PDF資料
PDF描述
AM29F016B-120E4I 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRL2505 with Lead Free Packaging
AM29F016B-120EC PDP Switch 230V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB4233PBF with Standard Packaging
AM29F016B-120EE x8 Flash EEPROM
AM29F016B-120EEB EEPROM
AM29F016B-120EI 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU48Z with Standard Packaging
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F016B120EC 制造商:Advanced Micro Devices 功能描述:
AM29F016B-120EC 制造商:Advanced Micro Devices 功能描述:
AM29F016B90EC 制造商:Advanced Micro Devices 功能描述:
AM29F016B-90EC 制造商:Advanced Micro Devices 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 90ns 48-Pin TSOP 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 48-Pin TSOP
AM29F016B-90SC 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 44-Pin SOP
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