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參數(shù)資料
| 型號： | AM29F016B-120DWC1 |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| 中文描述： | 2M X 8 FLASH 5V PROM, 120 ns, UUC37 |
| 封裝： | DIE-37 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 190K |
| 代理商： | AM29F016B-120DWC1 |
2/17/98
Am29F016B Known Good Die
7
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
Die dimensions, X x Y . . . . . . . . . 267 mils x 280 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . .6.78 mm x 7.11 mm
Die Thickness. . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils
Bond Pad Size . . . . . . . . . . . . . X3.94 mils x 3.94 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100 μm x 100 μm
Pad Area Free of Passivation . . . . . . . . . .15.52 mils
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000 μm
2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
Bond Pad Metalization. . . . . . . . . . . . . . . . . . Al/Cu/Si
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
V
CC
(Supply Voltage). . . . . . . . . . . . . . .4.5 V to 5.5 V
Junction Temperature Under Bias . .T
J
(max) = 130
°
C
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0
°
C to +70
°
C
Industrial . . . . . . . . . . . . . . . . . . . –40
°
C to +85
°
C
MANUFACTURING INFORMATION
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . .FASL
Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDC
Manufacturing ID . . . . . . . . . . . . . . . . . . . . .98163DK
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . . .CS39
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SPECIAL HANDLING INSTRUCTIONS
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250
°
C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Storage
Store at a maximum temperature of 30
°
C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
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PDF描述 |
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| AM29F016B | LM3350 Switched Capacitor Voltage Converter; Package: MINI SOIC; No of Pins: 8; Qty per Container: 3500; Container: Reel |
| Am29F016B-70E4EB | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F016B-70SEB | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F016B-70E4C | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F016B-70E4E | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F016B120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F016B-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F016B90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F016B-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 90ns 48-Pin TSOP 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 48-Pin TSOP |
| AM29F016B-90SC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 44-Pin SOP |
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