參數(shù)資料
型號: AM29F016B-120DTC1
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: LM3351 Switched Capacitor Voltage Converter; Package: MINI SOIC; No of Pins: 8; Qty per Container: 3500; Container: Reel
中文描述: 2M X 8 FLASH 5V PROM, 120 ns, UUC37
封裝: DIE-37
文件頁數(shù): 26/36頁
文件大小: 219K
代理商: AM29F016B-120DTC1
26
Am29F016
AC CHARACTERISTICS
Write/Erase/Program Operations
Notes:
1. This does not include the preprogramming time.
2. Not 100% tested.
3. These timings are for Temporary Sector Group Unprotect operation.
Parameter Symbol
Parameter Description
Speed Options (Notes 1 and 2)
Unit
JEDEC
Standard
-75
-90
-120
-150
t
AVAV
t
WC
Write Cycle Time
Min
70
90
120
150
ns
t
AVWL
t
AS
Address Setup Time
Min
0
0
0
0
ns
t
WLAX
t
AH
Address Hold Time
Min
40
45
50
50
ns
t
DVWH
t
DS
Data Setup Time
Min
40
45
50
50
ns
t
WHDX
t
DH
Data Hold Time
Min
0
0
0
0
ns
t
OEH
Output
Enable
Hold Time
Read 2
Min
0
0
0
0
ns
Toggle Bit I and Data Polling
2
Min
10
10
10
10
ns
t
GHWL
t
GHWL
Read Recover Time Before Write
(OE high to WE low)
Min
0
0
0
0
ns
t
ELWL
t
CS
CE Setup Time
Min
0
0
0
0
ns
t
WHEH
t
CH
CE Hold Time
Min
0
0
0
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
40
45
50
50
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
20
20
20
20
ns
t
WHWH1
t
WHWH1
Byte Programming Operation
Typ
7
7
7
7
μ
s
t
WHWH2
t
WHWH2
Sector Erase Operation 1
Typ
1
1
1
1
sec
Max
8
8
8
8
sec
t
VCS
V
CC
Set Up Time 2
Min
50
50
50
50
μ
s
t
VIDR
Rise Time to V
ID
(Notes 2, 3)
Min
500
500
500
500
ns
t
VLHT
Voltage Transition Time (Notes 2, 3)
Min
4
4
4
4
μ
s
t
OESP
OE Setup Time to WE Active (Notes 2, 3)
Min
4
4
4
4
μ
s
t
RP
RESET Pulse Width
Min
500
500
500
500
ns
t
BUSY
Program/Erase Valid to RY/BY Delay
Min
40
40
50
60
ns
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