參數(shù)資料
型號: AM29F016-75FCB
廠商: Advanced Micro Devices, Inc.
英文描述: 16-Megabit(2097152*8-bit)CMOS 5.0 Volt-only,sector Erase Flash memory
中文描述: 16兆(2097152 * 8位)CMOS 5.0伏只,扇區(qū)擦除快閃記憶體
文件頁數(shù): 20/36頁
文件大?。?/td> 219K
代理商: AM29F016-75FCB
20
Am29F016
Figure 3.
Data Polling Algorithm
DQ7 is rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
Start
Fail
No
Yes
DQ7 = Data
No
Pass
Yes
No
Yes
DQ7 = Data
DQ5 = 1
Yes
Read Byte
(DQ0–DQ7)
Addr = VA
Read Byte
(DQ0–DQ7)
Addr = VA
VA = Byte address for programming
= Any of the sector addresses within the sector
being erased during sector erase operation
= Valid address equals any non-protected sector
group address during chip erase
18805D-8
18805D-10
Figure 5.
Maximum Negative Overshoot Waveform
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
相關PDF資料
PDF描述
AM29F016-75FI LM330 3-Terminal Positive Regulator; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
AM29F016-75SC LM3310 Step-Up PWM DC/DC Converter with Integrated Op-Amp and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 1000; Container: Reel
AM29F016-75SCB LM3310 Step-Up PWM DC/DC Converter with Integrated Op-Amp and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel
AM29F016-75SI LM3311 Step-Up PWM DC/DC Converter with Integrated LDO, Op-Amp, and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 1000; Container: Reel
AM29F016-75SIB LM3311 Step-Up PWM DC/DC Converter with Integrated LDO, Op-Amp, and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel
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