參數(shù)資料
型號: AM29F010-90DTE1
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1
中文描述: 128K X 8 FLASH 5V PROM, 90 ns, UUC30
文件頁數(shù): 4/8頁
文件大?。?/td> 56K
代理商: AM29F010-90DTE1
4
Am29F010 Known Good Die
1/13/98
S U P P L E M E N T
PAD DESCRIPTION
Note:
The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
Pad
Signal
Pad Center (mils)
Pad Center (millimeters)
X
Y
X
Y
1
V
CC
0.00
0.00
0.00
0.00
2
A16
–33.20
–1.30
–0.84
–0.03
3
A15
–41.60
–1.30
–1.06
–0.03
4
A12
–49.90
–1.30
–1.27
–0.03
5
A7
–58.30
–1.30
–1.48
–0.03
6
A6
–66.60
–1.30
–1.69
–0.03
7
A5
–75.00
–1.30
–1.91
–0.03
8
A4
–74.40
–10.50
–1.89
–0.27
9
A3
–75.60
–158.20
–1.92
–4.02
10
A2
–69.40
–166.80
–1.76
–4.24
11
A1
–56.10
–166.80
–1.42
–4.24
12
A0
–46.10
–166.80
–1.17
–4.24
13
D0
–36.30
–166.90
–0.92
–4.24
14
D1
–25.90
–166.90
–0.66
–4.24
15
D2
–13.30
–166.90
–0.34
–4.24
16
V
SS
–4.30
–166.90
–0.11
–4.24
17
D3
4.70
–166.90
0.12
–4.24
18
D4
17.30
–166.90
0.44
–4.24
19
D5
27.60
–166.90
0.70
–4.24
20
D6
40.20
–166.90
1.02
–4.24
21
D7
50.60
–166.90
1.29
–4.24
22
CE#
60.60
–166.80
1.54
–4.24
23
A10
74.00
–166.80
1.88
–4.24
24
OE#
81.40
–158.20
2.07
–4.02
25
A11
80.20
–10.40
2.04
–0.26
26
A9
80.80
–1.30
2.05
–0.03
27
A8
72.40
–1.30
1.84
–0.03
28
A13
64.10
–1.30
1.63
–0.03
29
A14
55.70
–1.30
1.41
–0.03
30
WE#
47.40
–1.30
1.20
–0.03
相關(guān)PDF資料
PDF描述
AM29F010-120DTE1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1
AM29F010-90DTI1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1
AM29F010-120DTI1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1
AM29F010-90DWI1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1
AM29F010-120DWI1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1
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